SC23M28 SILAN | Alldatasheet
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Technical content
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 1 of 10 8KBIT MEMORY CARD IC
DESCRIPTION
SC23M28 is a smart card module utilizing CMOS EEPROM technology. 1024 bytes main memory with writeprotect function and programmable security code. And the periphery interface is compatible with ISO7816 agreement (synchronous propagation).
FEATURES
- 1024 X 8 bit EEPROM * Byte addressing * Permanent writeprotect for each byte * 1024 X 1bit me mory protection * Serial three buses interface * More than 100,000 times write endurance cycles * Data retention of more than 10 years * Contact definition and serial interface comply to ISO7816 specification (synchronous propagation) * 2Byte programmable security code PSC(Programmable Security Code), and the data can be changed only when pass the PSC authentication * Compatible with SLE4428
APPLICATIONS
- Used for various IC cards.
ORDERING INFORMATION
SC23M28A P813 SC23M28B MCTS012106 SC23M28C P812 SC23M28D FPC1 BLOCK DIAGRAM
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 2 of 10 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Ratings Unit Power Supply Voltage VCC 0.3~6 V Input Voltage VI 0.3~6 V Storage Temperature Tstg 40~125 °C Power Dissipation Ptot 60 mW DC ELECTRICAL CHARACTERISTICS (VCC=5V, Ta mb =25°C) Characteristics Symbol Condition Min. Typ. Max. Unit Supply Voltage VCC 2.4 5.5 V Supply Current ICC 2 10 mA H Input Voltage(I/O, CLK, RST) VIH 3.0 VCC V L Input Voltage(I/O, CLK, RST) VIL 0 1.2 V H Input Current (I/O, CLK, RST) IH 3 5 µ A L Output Current (VL=0.4V, Open drain) IOL 0.5 1.0 mA H Leakage Current (V H=VCC, Opendrain) IOH 1 µ A Input Capacitance Ci 10 pF Operating Frequency F 20 kHz AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VCC=5.0V, Ta mb=25°C, and testing frequency is 20kHz) Characteristics Symbol Condition Min. Typ. Max. Unit Reset Time tRE 9 µ s CLK (High Level) tH 10 µ s CLK (Low Level) tL 10 µ s Write Time tW 5 ms Erase Time tE 5 ms Set Up Time(D/CLK) td1 4 µ s Set Up Time (CLK/RST) td3 4 µ s Set Up Time (RST/CLK) td4 4 µ s Hold Time(D/CLK) td5 4 µ s Delay Time(CLK/D) td2 6 µ s Rise Time (I/O, CLK, RST) tR 1 µ s Fall Time(I/O, CLK, RST) tF 1 µ s
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 3 of 10 PIN CONFIGURATION VCC RST CLK NC NC NC I/O GND (Contact of the card) PIN DESCRIPTIONS Pin No. Symbol I/O Description
1 VCC Power supply voltage is 5V
2 RST I Reset signal
3 CLK I Clock signal
4 NC No connect
5 GND Ground
6 NC No connect
7 I/O I/O Data bus(opendrain output)
8 NC No connect
SC23M28 provides 1024×8 bits EEPROM memory units with writeprotect for each bit. Except PSC (Programmable Security Code) memory unit, all units are readable. The unit can be erased and written before the writeprotect is active, or else the unit is only readable. The bit with writeprotection can be programmed only once, and cannot be erased. The chip has one 8bit error register which provides 8 times continuous PSC authentication, after 8 times the chip cannot be erased and written. 1. Reset and reset acknowledge The chip enters the power on reset state when it is power on, and this state will end by the reset signal. The reset signal begins when RST changed from “ 0” to “ 1” , and end when CLK changed from “ 0” to“ 1” . The reset signal can stop any active instruction. Read operation must be carried out first after power on reset, then the other operations. The reset acknowledge complies to ISO78163 synchronous propagation. The address counter is set to “ 0” automatically and will send the first data to the I/O port. As the clock signal, the address data can be read serially. The details refer to the figure 1.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 4 of 10 Figure 1 Reset and reset acknowledge VCC RST CLK I/O 1 2 3 31 32 32311 2 3 td4 RST td4 td2 tH tL td5 CLK I/O 2. Instruction format The chip inputs and outputs the data by I/O ports, and the RST signal will control the direction of the data; RST=1, I/O is instruction input; RST=0, I/O is data output. Instruction table Byte1 Byte2 Byte3 S0 S1 S2 S3 S4 S5 A8 A9 A0A7 D0D7 Operation 1 0 0 0 1 1 Input data With bitprotect erasure or write 1 1 0 0 1 1 Input data Without bitprotect erasure or write 0 0 0 0 1 1 Comparative data Write protect bit with data comparison 0 0 1 1 0 0 Invalid With bitprotect read 0 1 1 1 0 0 Address bit 8, 9 Address bit 07 Invalid Without bitprotect read 0 1 0 0 1 1 253 Bit mask code Write error counter 1 0 1 1 0 0 254 PSC code 1 Authentication PSC code 1 1 0 1 1 0 0 1 1
255 PSC code 2 Authentication PSC code 2
Figure 2 Command input time sequence
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 5 of 10 3. Instruction description
3.1 Erase/write operation
1) Erase or write with protect bit The write protect bit is active as long as you write the data, and this unit is only readable. 2) Erase or write without protect bit. Write the data but not set the protect bit, so this unit can still be erased and written. 3) Write protect bit with data comparison When the command is executed, it will compare the data and the content of the destination address unit, if the contents are the same, then write “ 0” to the corresponding address unit; if the contents are different, do nothing. The chip can execute 3 erase and write operation: Erase and write (Last 203 clock cycles) (Figure3); Only Write: used for some bits of 1 byte data change from “ 1” to “ 0” (Last 103 clock cycles)(Figure4); Only Erase: data is FF (Last 103 clock cycles) (Figure4). I f e r r o r o c c u r s w h e n e r a s e o r w r i t e d a t a , I / O p o r t w i l l c h a n g e f r o m h i g h l e v e l t o l o w l e v e l a t t h e raising edge of the third clock cycle. (Figure5). Figure3 Erase and write time sequence Figure4 Only Erase or only Write time sequence
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 6 of 10 Figure5 Time sequence of erase or write error
3.2 Read operation
1) Read with protect bit This command will read the content of the destination address unit and the corresponding protect bit together, 9 bits in total (Figure6). After 9 clock cycles, the address increases by 1 automatically. 2) Read without protect bit This command will only read the content of the destination address unit˄Figure6˅. After 8 clock cycles, the address increases by 1 automatically. When RST changes from “ 0” to“ 1” , read operation stops. Figure6 Read operation time sequence
3.3 Password authentication
The SC23M28 is only readable without PSC authentication. The content of PSC cannot be read, if you try to read PSC, you will get “ 00” . The authentication steps are as follows: Write one to not written error counter (EC) bit and the EC address is“ 1021” ; Input the first byte data of PSC code, and the address is“ 1022” ; Input the second byte data of PSC code, and the address is “ 1023” ; If pass the authentication, EC can be erased.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 7 of 10 Figure7 Time sequence of write error counter and PSC code authentication If the initial value of the error counter is “ 00” , the error counter cannot be written, and also cannot go through the password authentication. After the PSC authentication, I/O port will change from “ 1” to “ 0” at the raising edge of the second clock no matter pass the authentication or not. When RST changes from “ 0” to“ 1” , I/O port returns to “ 1” . The flow chart is as follows: Figure8 PSC authentication flow chart
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 8 of 10 PACKAGE OUTLINE MCTS012106 UNIT: mm P813 UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 9 of 10 PACKAGE OUTLINE P812 UNIT: mm 0.46̚0.53 12.60±0.10 FPC1 UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2006.07.21 Http: www.silan.com.cn Page 10 of 10 HANDLING MOS DEVICES: Electrostatic charges can exist in many things. All of our MOS devices are internally protected against electrostatic discharge but they can be damaged if the following precautions are not taken:
- Persons at a work bench should be earthed via a wrist strap.
- Equipment cases should be earthed.ҏ
- All tools used during assembly, including soldering tools and solder baths, must be earthed.
- MOS devices should be packed for dispatch in antistatic/conductive containers.