SBS822 SANYO | Alldatasheet

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Technical content

Features

  • Low forward voltage (I F=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
  • Composite type with 2 low V F SBDs in one package, facilitating high-density mounting.
  • Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm).
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 20 V Nonrepetitive Peak Reverse Surge Voltage VRSM 20 V Average Output Current IO When mounted on ceramic substrate (1000mm ×0.8mm) Rectangular wave 1A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 5 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=0.5mA 20 V Forward Voltage VF1I F=0.5A 0.34 0.39 V VF2I F=0.7A 0.37 0.42 V VF3I F=1A 0.41 0.46 V Reverse Current I R VR=10V 110 μA Marking : SJ Continued on next page. 62409SB TK IM TC-00002001 SANYO Semiconductors DATA SHEET SBS822 www.semiconductor-sanyo.com/network Low VF Schottky Barrier Diode 20V, 1A Rectifi er

No. A1504-2/3 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Interterminal Capacitance C V R=10V, f=1MHz 19 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a) When mounted on ceramic substrate (1000mm ×0.8mm) 130 °C / W Package Dimensions Electrical Connection unit : mm (typ) 7021A-001 trr Test Circuit 123 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode Top view 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode SANYO : MCPH5 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 123 12 3 Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA IT14723 IT14724 0.001 0.01 0.1 1E-02 1E-01 1E+00 1E+01 1E+02 1E+05 1E+04 1E+03 Ta=125 °C 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C 100 1.0

No. A1504-3/3 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of June, 2009. Specifi cations and information herein are subject to change without notice. Ta -- IO Ambient Temperature, Ta -- °C Average Output Current, IO -- A C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF 125 100 150 IT14725 (5)(1) (2) (4) 0.1 1.0 10 100 23 5 7 23 5 3 72 IT14726 f=1MHz (3) (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC