SBS813 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Small switching noise.
  • Low forward voltage (IF=3A, VF max=0.42V).
  • Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current I O 3.0 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 20 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Reverse Voltage V R IR =2.0mA 30 V Forward Voltage V F IF=2.0A 0.335 0.385 V IF=3.0A 0.37 0.42 V Reverse Current I R VR =15V 1.4 mA Interterminal Capacitance C V R =10V, f=1MHz 90 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 20 ns Thermal Resistance Rth(j-a) Mouted on a ceramic board (1200mm25 0.8mm) 50 °C / W Marking : SF 72606 / 32406SB MS IM TB-00002133 SBS813 Low VF Schottky Barrier Diode 30V, 3.0A Rectifier SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No.8972-2/3 Package Dimensions Electrical Connection unit : mm 7012-001 0.004 0.008 0.012 105 0.016 0.002 0.006 0.010 0.014 2015 30 25 35 IT10607 (1) (2) (3) (4) 0 0.1 0.2 IT09872 100 35 IT09873 0.01 0.1 1.0 0.60.3 0.4 0.5 0.1 1.0 100 10k 100k 1000k 201552 5 3 0 Ta=125 100 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C (2) (3)(1) 0.5 1.8 1.6 1.4 0.2 0.4 0.6 0.8 1.0 1.2 IT09874 (4) Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- µA Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangularwave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° PR (AV) -- VR Average Reverse V oltage, VR -- V (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave θ 360° V R 180° 360° V R Average Reverse Power Dissipation, PR (A V) -- W 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : VEC8 12 34 87 65 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 Top view

No.8972-3/3PS 120 100 140 IT10608 (3)(1) (2)(4) 7 0.01 23 7 0.1 52 2 3 37 1.05 ID00523 IFSM -- t IS 20ms t Current waveform 50Hz sine wave Time, t -- s Surge Forward Current, IFSM (Peak) -- A Reverse V oltage, VR -- V C -- VR Interterminal Capacitance, C -- pF 0.1 2 100 35 7 1.0 23 5 23 5 7 10 IT09871 Tc -- IO θ 360° 180° 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sinewave Case Temperature, Tc -- °C Average Output Current, IO -- A *When mounted in reliability operaion board, Rth(J-a)=50°C/W This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.