SBR100-10JS

SBR100-10JS SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low reverse current.
• Low switching noise.
• High reliability due to planar structure.
• Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 100 V Nonrepetitive Peak Reverse Surge Voltage VRSM 105 V Average Output Current I O 50Hz resistive load, Tc=107°C1 0 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 80 A Junction Temperature Tj - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Reverse Voltage V R IR =2mA, Tj=25°C* 100 V Forward Voltage V F IF=5A, Tj=25°C* 0.85 V Reverse Current I R VR =50V, Tj=25°C* 100 µA Interterminal Capacitance C V R =10V, Tj=25°C* 170 pF Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 4.0 °C / W Note) * : Value per element SANYO Semiconductors DATA SHEET N0806SD SY IM TC-00000297 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBR100-10JS Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 10A Rectifier

No. A0560-2/3 Package Dimensions Electrical Connection unit : mm (typ) 7525-001 Anode Anode Cathode 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 0.75 0.7 123 10.0 3.5 7.2 16.014.0 3.6 1.2 1.6 2.552.55 4.5 2.8 2.4 3.2 0.1 1.0 1.20.4 0.8 Forward V oltage, VF -- V IF -- VF Forward Current, IF -- A IT05463 Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- mA IT05464 1.0 0.1 12020 40 60 80 100 Peak Reverse V oltage, VRM -- V PR (AV) -- VRM Average Reverse Power Dissipation, PR (A V) -- W IT05466Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W IT05465 2.5 0.5 1.0 1.5 2.0 11010 20 30 40 50 60 70 80 90 10002468 1 0 1 2 1 4 Tj=150 25°C Tj=150°C typ (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine waveθ =180° (1) (1) (2) (2) (3) (4) (4) (3) 180° θ 360° 360° Rectangularwave Sine waveRectangular wave Sine wave V R V R 180° θ 360° 360° 125°C typ 100°C typ 75°C typ

No. A0560-3/3PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Rth(j - c) -- t Transient Thermal Resistance Rth(j - c) -- °C / W Time, t -- s IT05470 0.001 0.1 1.0 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 2357 10 IFSM -- t Surge Forward Current, IFSM (Peak) -- A Time, t -- s IT05469 0.01 23 5 7 0.1 1.0 23 23 57 IS 20ms t Current waveform 50Hz sine wave C -- VR Interterminal Capacitance, C -- pF Reverse V oltage, VR -- V IT05468 1.0 1000 100 10023 5 7 10 23 5 7 f=100kHz Tc -- IO Case Temperature, Tc -- °C Average Output Current, IO -- A IT05467 100 110 120 130 140 150 160 02468 1 0 1 4 12 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1) (2) (4) (3) 180° θ 360° 360° Rectangularwave Sinewave This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.