SBM81314G

SBM82314G INFINEON | Alldatasheet

Document overview

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Technical content

Features

 Designed for application in passive-optical networks  Integrated Wavelength Division Multiplexer (WDM) or Beam Splitter  Bi-Directional Transmission in 2nd and 3rd optical window  Single fiber solution  FP-Laser Diode with Multi-Quantum Well structure  Class 3B Laser Product  Suitable for bit rates up to 1.25 Gbit/s  Ternary Photodiode at rear mirror for monitoring and control of radiant power  Low noise / high bandwidth PIN diode  Hermetically sealed subcomponents, similar to TO 46  With singlemode fiber pigtail

Description

The Infineon module for bidirectional optical transmission has been designed for different optical networks structures. In the last few years the structure has changed from point to point planned for Broad band ISDN to a point to multipoint passive optical network (PON) architecture for the optical network in the subscriber loop. A transceiver can be realized with discrete elements ( Figure 3). Transmitter and receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength independent or WDM). Figure 3 Realization with Discrete Elements Infineon has realized this transceiver configuration in a compact module called a BIDI (Figure 4). This module is especially suitable for separating the opposing signals at the ends of a link. It replaces a discrete solution with a transmitter, receiver and coupler. The basic devices are a laser diode and a photodiode, each in a TO package, plus the filter in the beam path. A lens in the TO laser concentrates the light and enables it to be launched into the single-mode fiber of the module. In the same way the light from the fiber is focused onto the small, light-sensitive area of the photodiode to produce a high photo current. The mirror for coupling out the received signal is arranged in the beam so that the transmitter and receiver are at right angles to each other. This means the greatest possible degree of freedom in the layout of the electric circuit. Coupler 2:1 or 2:2 3 dB wavelength independent or wavelength division multiplexing Transmitter Receiver

Figure 4 Compact Realization of the Transceiver in One Module A decisive advantage of the module is its use of standard TO components. These devices, produced in large quantities, are hermetically sealed and tested before they are built in. This makes a very substantial contribution to the excellent reliability of the module. The solid metal package of the module serves the same purpose. It allows the use of modern laser welding techniques for reliable fixing of the different elements and the fiber holder. TO-Detector Glass Lens Fiber Beam Splitter TO- Laser

Parameter Symbol Limit Values Unit min. max. Module Operating temperature range at case TC –40 85 °C Storage temperature range Tstg –40 85 Soldering temperature (tmax = 10 s, 2 mm distance from bottom edge of case) TS 260 Laser Diode Direct forward current IF max 120 mA Radiant power CW PF, rad 2m W Reverse Voltage VR 2V Monitor Diode Reverse Voltage VR 10 V Forward Current IF 2m A Receiver Diode Reverse Voltage VR 10 V Forward Current IF 2m A Optical power into the optical port Pport 1.5 mW

The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. typ. max. Optical output power (maximum) PF, max 1.2 mW Emission wavelength center of range, PF = 0.5 PF, max. λtrans 1510 1590 nm Spectral width (RMS) σλ 5 Temperature coefficient of wavelength TC 0.5 nm/K Threshold current (whole temperature range) Ith 25 5 m A Forward voltage, PF = 0.5 PF, max. VF 1.5 V Radiant power at Ith Pth 50 µW Slope efficiency (–40...85°C) η 20 100 mW/A Variation of 1st derivative of P/I (0.1 to 1.0 mW) Svar –30 30 % Differential series resistance RS 8 Ω Rise time (10%–90%) tr 100 200 ps Fall time (10%–90%) tf 270 500 Monitor Diode Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. max. Dark current, VR = 5 V, PF = 0, T = Tmax IR 200 nA Photocurrent, VR = 5 V, PF = 0.5 PF, max IP 50 1500 µA Capacitance, VR = 5 V, f = 1 MHz C5 10 pF Tracking error , VR = 5 V The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by: TE –1 1 dB TE dB[] 10 PF TC[] PF 25°C[]

Receiver Diode Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. max. Spectral sensitivity, VR = 5 V, λ = 1310 nm Srec 0.65 1 A/W Rise and fall time (10%–90%) RL = 50 Ω, VR = 5 V tr; tf 1n s Total capacitance VR = 5 V, Popt = 0, f = 1 MHz C 1.5 pF Dark current, VR = 5 V, Popt = 0 ID 50 nA Module Electro-Optical Characteristics Parameter Symbol Limit Values Unit min. max. Optical Crosstalk1) Optical Crosstalk is defined as with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and IDet,1: the photocurrent without PF, but 0.5 PF, max. optical input power, λ = 1310 nm. CRT –47 dB End of Life Time Characteristics Parameter Symbol Limit Values Unit min. max. Threshold current at T = Tmax Ith 60 mA Current above threshold, over full temperature range, at Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max., BOL) ∆IF 77 0 Tracking Error TE –1.5 1.5 dB Detector Dark Current, VR = 2 V, T = Tmax IR 400 nA Monitor Dark Current, VR = 2 V, T = Tmax IR 1µ A CRT dB[] 10 IDet.0 IDet.1

The mechanical fiber characteristics are described in the following table. Fiber Characteristics Parameter Limit Values Unit min. typ. max. Mode Field Diameter 8 9 10 µm Cladding Diameter 123 125 127 Mode Field/Cladding Concentricity Error 1 Cladding Non-circularity 2 % Mode Field Non-circularity 6 Cut off Wavelength 1270 nm Jacket Diameter 0.8 1 mm Bending Radius 30 Tensile Strength Fiber Case 5 N Length 0.8 1.2 m

SM SC/PC 0° SBM82314Z SBM81314Z SM without connector connector type 1) 1mm above TO-bottom Dimensions in mm

Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. SBM82314x Previous Version: Page Subjects (major changes since last revision) Document’s layout has been changed: 2002-Aug.