SBM51414A

SBM51414X SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 1 02.95 BIDI Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, Medium Power SBM 51414X

• Designed for application in passive-optical networks
• Integrated Wavelength Division Multiplexer
• Bidirectional Transmission in 2nd and 3rd optical window
• Laser diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary Photodiode at rear mirror for monitoring and control of radiant power
• Low noise/high bandwidth PIN diode
• With singlemode fiber pigtail Type Ordering Code Connector SBM 51414A Q62702-P3049 DIN SBM 51414G Q62702-Pxxxx FC / PC Component with other connector types on request. Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature. Parameter Symbol Values Unit Module Operating temperature range at case TC − 40 … + 85 °C Storage temperature range Tstg − 40 … + 85 °C Soldering temperature tmax = 30 s, 2 mm distance from bottom edge of case TS 260 °C Laser Diode Forward current IF max 150 mA Radiant power CW Φ e 2 mW Reverse voltage VR max 2 V

Maximum Ratings (cont’d) Parameter Symbol Values Unit Monitor Diode Forward current IF max 2 mA Reverse voltage VR max 10 V PIN Photodiode Forward current IF max 2 mA Reverse voltage VBR 10 V Maximum optical power into the optical portΦ port max 1.5 mW Characteristics All optical data refer to the optical port, TC = 25 °C. Parameter Symbol Values Unit Laser Diode Optical output power Φ e > 1.2 mW Emission wavelength center of range Φ e = 0.5 mW λ 1270 … 1350 nm Spectral bandwidth Φ e = 0.5 mW (RMS) Δλ 5 nm Threshold current (− 40 … + 85 °C) Ith 2 … 45 mA Forward voltage Φ e = 0.5 mW VF < 1.5 V Radiant power at Ith Φ eth < 50 µW Current above threshold at 25 °C, Φ e = 1 mW ΔIF 10 … 35 mA Current above threshold, Φ e = 1 mW ΔIF 7 … 50 mA Variation of 1st derivative of P/I (0.1 … 1mW) d P/dI − 30… 30 % Differential series resistance rS < 8 Ω Rise and fall time (10 % - 90 %) tr, tf < 1 ns

Characteristics (cont’d) Parameter Symbol Values Unit Laser Diode (cont’d) Temperature coefficient of wavelength TC λ < 0.5 nm / K Monitor Diode Dark current, VR = 2 V, Φ e = 0, TC = 85 °C IR 200 nA Photocurrent, VR = 2 V, Φ e = 0.5 mW IP 200 … 1200 µA Capacitance, VR = 2 V, f = 1 MHz C 2 < 10 pF Tracking error, VR = 2 V (see note 1) TE − 1 … 1 dB Detector Dark current, VR = 2 V, Φ e = 0, TC = 85 °C IR < 50 nA Spectral sensitivity, VR = 2 V, λ = 1550 nm Sλ > 0.65 A / W Capacitance, VR = 2 V, f = 1 MHz C 2 < 1.5 pF Rise and fall time, VR = 2 V, 10 % - 90 % tr, tf < 1 ns Module Optical crosstalk (see note 2) CRT < − 47 dB Note 1: The tracking error TE is the variation rate of Φ e at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon (T = 25 °C, Φ e = 0.5 mW). Thus, TE is given by: [[] ] [[] ] [[] ] [[] ]TE T dB log C C eC e e == −− °°10 ΦΦ Φ Note 2: Optical Crosstalk is defined as CRT = 10 × log (IDet,0/IDet,1) with: IDet,0 the photo- current with Φ e = 0.5 mW CW laser operation, VR = 2 V, with minimum optical return loss from fiber end and IDet,1 the photocurrent without Φ e, but 0.5 mW optical input power, λ = 1550 nm.

T = 25 °C: Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power, peak wavelength. T = 85 °C: Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power. End of Life Values Parameter Symbol Values Unit Threshold current at T = 85 °C Ith < 60 mA Current above threshold, over full temperature range, at Imon,ref = Imon (T = 25 °C, Φ e = 1 mW, BOL) ΔIF 7 … 70 mA Tracking error (see note 1) TE − 1.5 … 1.5 dB Detector dark current, VR = 2 V, T = 85 °C IR < 400 nA Monitor dark current, VR = 2 V, T = 85 °C IR < 1 µA Fiber Pigtail Type: single mode, silica Parameter Values Unit Mode field diameter 9 ± 1µ m Cladding diameter 125 ± 2µ m Mode field/cladding concentricity error < 1 µm Cladding non-circularity < 2 % Mode field non-circularity < 6 % Cut-off wavelength > 1270 nm Jacket diameter 0.9 ± 0.1 mm Bending radius > 30 mm Tensile strength fiber/case > 5 N Length 1 ± 0.2 m

Radiant Power in Singlemode Fiber Relative Radiant Power Φ e = f(λ) 0.2 0.4 0.6 0.8 1.2 01 0 2 0 3 0 Forward Current in mA Optical Power in mW 100 1306 1308 1310 1312 1314 Wavelength in nm Relative Optical Power Laser Forward Current IF = f(VF) Monitor Diode Dark Current IR = f(TA ) Φ port = 0, VR = 5 V 100 0 0.4 0.8 1.2 1.6 Forward Voltage in V Forward Current in mA 0.01 0.1 100 1000 -50 0 50 100 Temperature in °C Dark Current in nA

Capacitance of PIN Diode C = f(V R ) Φ port = 0, f = 1 MHz Rel. Spectral Sensitivity of PIN Diode VR = 5 V 0.1 0.1 1 10 100 Reverse Bias in V Capacitance in pF 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1200 1400 1600 1800 2000 Wavelength in nm Sensitivity in A/W Dark Current of PIN Diode IR = f(V R ) IF = f(VF) Dark Current of PIN Diode IR = f(TA ) Φ port = 0, VR = 5 V 0.001 0.01 0.1 0 5 10 15 20 Reverse Bias in V Dark Current in nA 0.001 0.01 0.1 100 -50 0 50 100 Ambient Temper ature in °C Dark Current in nA

Package Outlines (Dimensions in mm) SBM 51414X