SBL3030PT NJSEMI | Alldatasheet
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Technical content
J ^Piocvuaii, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SBL3030PT thru SBL3045PT LowVp Schottky Barrier Rectifiers Dimensions TO-247AD C(TAB) A=Anode, C=Cathode, TAB=Cathode SBL3030PT SBL3035PT SBL3040PT SBL3045PT VRRM V VRMS V 24.5 31.5 VDC V E } '
- -C— • I t F t H Lr~ JM Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 5.3 0.4 0.8 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol I(AV) IFSM VF GJ Rejc TJ TSTG Characteristics Maximum Average Forward Rectified Current @Tc=90°C Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 1 5.0A DC Maximum DC Reverse Current @Tj=25°C At Rated DC Blocking Voltage @Tj=1 00°C Typical Junction Capacitance Per Element (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range Maximum Ratings 275 0.55 700 2.0 -55 to +125 -55 to +150 Unit A A V mA pF °C/W NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Thermal Resistance Junction To Case.
FEATURES
- Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications Quality Semi-Conductors MECHANICAL DATA * Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any