SBE818-TL-E SANYO | Alldatasheet

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Technical content

Features

  • Composite type device with 2 low I R SBD shoused in one package, facilitating high density mounting
  • Small switching noise
  • Low forward voltage (I F=2.0A, VF max=0.62V)
  • Low reverse current (V R=15V , IR max=7.5μA)
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current IO When mounted on ceramic substrate, Rectangular wave 180°C 2.0 A When mounted on glass epoxy substrate 1.5 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6) Package Dimensions unit : mm (typ) 7045-004

71812 TKIM/D0308SB MSIM TC-00001737

http://semicon.sanyo.com/en/network SBE818 Low IR Schottky Barrier Diode 30V, 2.0A Rectifi er Product & Package Information

  • Package : EMH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : EMH8 1 4 0.125 0.20.2 2.1 1.7 0.5 2.0 0.2 0.750.05 SBE818-TL-E 2341 7658 SC Lot No. *: Terminal 4 is used for the purposes such as test. Al- though it is connected to Anode 2, please handle it as NC Terminal.

No. A1379-2/6 Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 30 V Forward Voltage VF1I F=1.0A 0.48 0.53 V VF2I F=1.5A 0.53 0.58 V VF3I F=2.0A 0.57 0.62 V Reverse Current I R VR=15V 7.5 μA Interterminal Capacitance C V R=10V, f=1MHz 30 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a)1 When mounted in Cu-foiled area of 0.96mm ×0.03mm on glass epoxy substrate 100 °C / W Rth(j-a)2 When mounted on ceramic substrate (900mm ×0.8mm) 65 °C / W trr Test Circuit

Ordering Information

Device Package Shipping memo SBE818-TL-E EMH8 3,000pcs./reel Pb Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA

No. A1379-3/6 IT14256 IT14257 1E-03 1E-02 1E-01 1E-03 1E-04 1E-02 1E-01 1E+00 1E+01 1E+02 1E+04 1E+03 Ta=125 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C °C100 1E+00 (2) (3) (5) (1) 0.5 1.8 1.6 1.4 1.2 0.2 0.4 0.6 0.8 1.0 2.52.01.0 1.5 IT14258 (4) 0.0E+00 1.0E--05 1.5E--05 2.0E--05 2.5E--05 3.0E--05 3.5E--05 4.0E--05 4.5E--05 5.0E--05 105 5.0E--06 2015 25 30 35 IT14259 (1) (2) (3) (4) 125 100 150 IT14260 (5)(1) (2) (4) 125 100 150 IT14261 (3) (5)(1) (2) (4) (3) Forward V oltage, VF -- V Forward Current, IF -- μA IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0.01 23 7 0.1 52 2 37 1.05 IT13214 0.1 1.0 10 100 23 5 7 23 3 55 72 IT13217 Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangularwave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A PR(AV) -- VR Average Reverse V oltage, VR -- V (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave 180° 360° VR Average Reverse Power Dissipation, PR(A V) -- W IFSM -- t Time, t -- s Surge Forward Current, IFSM(Peak) -- A IS 20ms t Current waveform 50Hz sine wave C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF f=1MHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC θ 360° VR

No. A1379-4/6 Embossed Taping Specifi cation SBE818-TL-E

No. A1379-5/6 Outline Drawing Land Pattern Example SBE818-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.4 0.3 0.5 1.9

PS No. A1379-6/6 This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.