SBE818 SANYO | Alldatasheet

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Technical content

Features

  • Composite type device with 2 low I R SBD shoused in one package, facilitating high density mounting.
  • Small switching noise.
  • Low forward voltage (I F=2.0A, VF max=0.62V).
  • Low reverse current (V R=15V , IR max=7.5μA).
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current IO When mounted on ceramic substrate, Rectangular wave 180°C 2.0 A When mounted on glass epoxy substrate 1.5 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : SC *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). D0308SB MS IM TC-00001737 SANYO Semiconductors DATA SHEET SBE818 www.semiconductor-sanyo.com/network Low IR Schottky Barrier Diode 30V, 2.0A Rectifi er

No. A1379-2/4 Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 30 V Forward Voltage VF1I F=1.0A 0.48 0.53 V VF2I F=1.5A 0.53 0.58 V VF3I F=2.0A 0.57 0.62 V Reverse Current I R VR=15V 7.5 μA Interterminal Capacitance C V R=10V, f=1MHz 30 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a)1 When mounted in Cu-foiled area of 0.96mm ×0.03mm on glass epoxy substrate 100 °C / W Rth(j-a)2 When mounted on ceramic substrate (900mm ×0.8mm) 65 °C / W Package Dimensions Electrical Connection unit : mm (typ) 7045-004 trr Test Circuit *: Terminal 4 is used for the purposes such as test. Although it is connected to Anode 2, please handle it as NC Terminal 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 SANYO : EMH8 1 4 0.125 0.20.2 2.1 1.7 0.5 2.0 0.2 0.750.05 2341 7658 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 Top view Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA

No. A1379-3/4 IT14256 IT14257 1E-03 1E-02 1E-01 1E-03 1E-04 1E-02 1E-01 1E+00 1E+01 1E+02 1E+04 1E+03 Ta=125 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C °C100 1E+00 (2) (3) (5) (1) 0.5 1.8 1.6 1.4 1.2 0.2 0.4 0.6 0.8 1.0 2.52.01.0 1.5 IT14258 (4) 0.0E+00 1.0E--05 1.5E--05 2.0E--05 2.5E--05 3.0E--05 3.5E--05 4.0E--05 4.5E--05 5.0E--05 105 5.0E--06 2015 25 30 35 IT14259 (1) (2) (3) (4) 125 100 150 IT14260 (5)(1) (2) (4) 125 100 150 IT14261 (3) (5)(1) (2) (4) (3) Forward V oltage, VF -- V Forward Current, IF -- μA IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0.01 23 7 0.1 52 2 37 1.05 IT13214 0.1 1.0 10 100 23 5 7 23 3 55 72 IT13217 Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangularwave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A PR(AV) -- VR Average Reverse V oltage, VR -- V (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave 180° 360° VR Average Reverse Power Dissipation, PR(A V) -- W IFSM -- t Time, t -- s Surge Forward Current, IFSM(Peak) -- A IS 20ms t Current waveform 50Hz sine wave C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF f=1MHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC θ 360° VR

No. A1379-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of December, 2008. Specifi cations and information herein are subject to change without notice.