SBE808 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Small switching noise.
- Low leakage current and high reliability due to planar structure.
- Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 17 V Average Output Current I O 1A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C (Value per element) RatingsParameter Symbol Conditions min typ max Unit Reverse Voltage V R IR =0.1mA 15 V Forward Voltage VF1I F=0.5A 0.43 0.48 V VF2I F=1A 0.49 0.54 V Reverse Current I R VR =6V 3.0 µA Interterminal Capacitance C V R =10V, f=1MHz 20 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm25 0.8mm) 185 °C / W Marking : SE Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. N0106SB SY IM TC-00000264
No. A0451-2/3 Package Dimensions Electrical Connection unit : mm (typ) 7021A-001 trr Test Circuit 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode SANYO : MCPH5 2.0 0.251.6 2.1 0.250.85 0.30.65 0.15 0 to 0.02 0.07 123 12 3 123 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode Top view 10000 100 1000 1.0 0.1 0.01 0.001 0.0001 1621 0 41 2 61 4 8 0.2 0.4 0.6 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 0.01 0.001 0.1 1.0 Ta=150°C 25°C --25°C 50°C 75°C 100°C IT11243 IT11245 IT11244 (1) (2)(4)(3) Ta=150 --25 0°C 100 125 125°C 0°C (4) (3) (1) 0.0E+00 4.0E--06 2.0E--06 6.0E--06 1.2E--05 1.0E--05 8.0E--06 14 161061 2 842 (2) IT11246 IR -- VR PF(AV) -- IO IF -- VF Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA Average Output Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W(1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 180° 360° θ 360° Sine wave Rectangular wave PR (AV) -- VRM Peak Reverse V oltage, VRM -- V Average Reverse Power Dissipation, PR (A V) -- W 180° 360° V R (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave θ 360° V R Rectangularwave Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 100mA100mA 10mA
No. A0451-3/3 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS IFSM -- t Time, t -- s Surge Forward Current, IFSM (Peak) -- A 7 0.01 23 7 0.1 52 2 37 1.05 IT00626 IS 20ms t Current waveform 50Hz sine wave C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF IT07885 0.1 1.0 10 100 23 5 7 23 5 7 2 f=1MHz This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.