SBE602 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low forward voltage (VF max=0.55V).
  • Fast reverse recovery time (trr max=10ns).
  • Low switching noise.
  • Low leakage current and high reliability due to highly reliable planar structure.
  • Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim. Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current I O 70 mA Surge Forward Current I FSM 50Hz sine wave, 1 cycle 2 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Electrical Characteristics at Ta=25°C (Value per element) RatingsParameter Symbol Conditions min typ max Unit Reverse Voltage V R IR =20µA3 0 V Forward Voltage V F IF=70mA 0.55 V Reverse Current IR 1V R =2V 75 nA IR 2V R =15V 5.0 µA Interterminal Capacitance C V R =10V, f=1MHz 5.5 pF Reverse Recovery Time t rr IF=IR =10mA, See specified Test Circuit. 10 ns Therrmal Resistance Rth(j-a) Mounted in Cu-foiled area of 0.72mm25 0.03mm 300 °C / Won glass epoxy board Marking : SQ

No.8965-2/3 Package Dimensions Electrical Connection unit : mm (typ) 7019A-002 trr Test Circuit Duty£10% 50W 100W 10W --5V trr 10ms 10mA10mA 1mA 1 : Anode 2 : Anode 3 : Cathode Top view Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- µA Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 0.01 0.1 0.001 IT11425 IT11426 0.01 0.1 1.0 1000 100 51 0 1 5 2 0 2 5 3 0 3 5 Ta=125 100 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C (2) (3)(1) 0.01 0.050 0.040 0.045 0.035 0.005 0.010 0.015 0.020 0.025 0.030 IT11427 (4) 0.0E+00 1.0E--06 2.0E--06 3.0E--06 105 4.0E--06 5.0E--07 1.5E--06 2.5E--06 3.5E--06 2015 30 25 35 IT11428 (1) (2) (3) (4) PR (AV) -- VR Peak Reverse V oltage, VR -- V Average Reverse Power Dissipation, PR (A V) -- W (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave θ 360° V R 180° 360° V R (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° θ 360° Rectangularwave 180° 360° Sine wave 1 : Anode 2 : Anode 3 : Cathode SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02

No.8965-3/3PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 2 1.032 3 572 0.135 70.017 C -- VR 0.4 0.8 2.0 2.4 1.2 1.6 2.8 ID00235 IFSM -- t IS 20ms t Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave Time, t -- s Surge Forward Current, IFSM (Peak) -- A f=1MHz 23 5 23 50.1 72 1.0 35 7 10 IT11429 This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice.