SB80W06T SANYO | Alldatasheet

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Technical content

Features

  • Low forward voltage (V F max=0.6V).
  • Fast reverse recovery time.
  • Low switching noise.
  • High reliability due to highly reliable planar structure.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 60 V Nonrepetitive Peak Reverse Surge Voltage VRSM 66 V Average Output Current IO*2 50Hz resistive load, sine wave Tc=130°C 4 A IO*1 50Hz resistive load, sine wave Tc=83°C 8 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 40 A Junction Temperature Tj - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Note) *1. Indicates the total value * 2. Value per element 33110SB TK IM TC-00002010 SANYO Semiconductors DATA SHEET SB80W06T www.semiconductor-sanyo.com/network Schottky Barrier Diode (Twin Type • Cathode Common) 60V, 8A Rectifi er

No. A1505-2/3 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA, Tj=25°C *2 60 V Forward Voltage V F IF=3.0A, Tj=25°C *2 0.6 V Reverse Current I R VR=30V, Tj=25°C *2 0.1 mA Interterminal Capacitance C V R=10V, Tj=25°C *2 130 pF Transient Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 6 °C / W Note) *2. Value per element Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-001 7003-002 Electrical Connection 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Anode 2 : Cathode 3 : Anode 4 : Cathode SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Anode 2 : Cathode 3 : Anode 4 : Cathode SANYO : TP-FA 1 : Anode 2 : Cathode 3 : Anode Top view Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- mA IT14732 IT14733 0.001 0.01 0.1 1E-07 1E-01 1E-05 1E-04 1E-03 1E-02 1E-06 1E+00 1E+01 1E+02 1E+04 1E+03 Ta=150 100 --25 Ta=150°C 100°C 75°C 50°C 25°C 0°C --25°C 125 °C7 1.0 125°C 0°C

No. A1505-3/3 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifi cations and information herein are subject to change without notice. Tc -- IO Case Temperature, Tc -- °C Average Output Current, IO -- A 0 3 756 912 4 8 150 125 100 175 IT14734 (5) (1) (2) (4) (3) (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Reverse V oltage, VR -- V C -- VR Interterminal Capacitance, C -- pF IT08567 100 35 7 2 35 7 10 1001.0 f=100kHz