SB520-G COMCHIP | Alldatasheet
Document overview
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Technical content
Features
-Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -Lead-free part, meet RoHS requirements. -Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications Parameter Symbol Unit Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375” (12.7mm) lead length at TA=75°C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) TL=110°C Maximum f 5.0A orward voltage at (Note 1) Maximum DC reverse current At rated DC blocking voltage Typical junction capacitance (Note 2) Operating junction temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ -65 to +150 V V V A A V pF °C/W mA NOTES: 2. .Measured at 1.0MHz and applied reverse voltage of 4.0 Volts Storage temperature range TSTG Typical t (Note 3)hermal resistance RθJA RθJL 20 40 40 45 45 50 50 60 60 80 80 100 100 14 28 30 35 42 56 70 5.0 -65 to +150-65 to +125 3050 35.0 15.0 0.5 0.55 0.850.70 350 100 SB 520-G SB 540-G SB 545-G SB 550-G SB 560-G SB 5100-G SB 580-G ComchipS M D D i o d e S p e c i a l i s t 135 TA=25°C TA=100°C IR 1. Pulse test 300µs pulse width, 1% duty cycle.
RATING AND CHARACTERISTIC CURVES ( )SB520-G Thru. SB5100-G Page 2QW-BB051 REV:A Fig.1- Forward Current Derating Curve Average Forward Current, (A) Lead Temperature, ( °C ) 0 75 175 Fig.2 - Maximum Non-repetitive Peak Forward Surge Current Peak Forward Surge Current, (A) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Characteristics Instantaneous Forward Current, (A) Instantaneous Forward Voltage, (V) 50 100 125 2.0 4.0 6.0 Fig.4A - Typical Reverse Characteristics Instantaneous Reverse Current, (mA) Percent of Rated Peak Reverse Voltage, (%) 25 150 Fig.5 - Typical Junction Capacitance Junction Capacitacne, (pF) Reverse Voltage, (V) Leaded Schottky Barrier Rectifiers 5.0 3.0 1.0 Comchip Technology CO., LTD. 0 20 40 60 80 100 120 140 100 1.0 0.1 0.01 0.001 Fig. 4B - Typeical Reverse Characteristic Instantaneous Reverse Current, (uA) Percent of Rated Peak Reverse Voltage, ( %) 1 10 1000 100
200 TL=110°C
8.3mS single half sine-wave (JEDEC Method) 0.1 1.0 10 100 100 1000 TJ=25°C f=1.0MHz SB520-G ~ SB545-G SB550 ~ SB5100-G -G single phase half wave 60Hz resistive or inductive load 3.75”(9.5mm) lead length 1.0 0.1 SB580 ~ SB5100-G -G TJ=25°C TJ=125°C SB520-G ~ SB545-G SB320-G ~ SB3100-G 1 0 20 40 60 80 100 TJ=25°C TJ=125°C TJ=150°C ComchipS M D D i o d e S p e c i a l i s t SB520-G ~ SB545-G SB550-G ~ SB5100-G 150 SB520-G ~ SB545-G SB550-G ~ SB5100-G TJ=100°C 0.01 SB550 ~ SB560-G -G SB520 ~ SB545-G -G pulse width =300µS 1% duty cycle, Tj=25°C Vsig=50mvp-p 10 1 10 2 10 4 10 5 TJ=75°C
Leaded Schottky Barrier Rectifiers Page 3QW-BB051 REV:A Comchip Technology CO., LTD. ComchipS M D D i o d e S p e c i a l i s t Marking Code XXX / XXXX = Product type marking code SBXXX Marking Code Standard Packaging 1) Suffix code after part number to specify packaging item . Note: Packaging AMMO Reel PACK BULK PACK Code T B Marking codePart Number SB540B-G SB545B-G SB550B-G SB560B-G SB580B-G SB5100B-G SB520T-G SB540T-G SB545T-G SB550T-G SB560T-G SB580T-G SB5100T-G SB520B-G Packaging AMMO REEL AMMO REEL AMMO REEL AMMO REEL AMMO REEL AMMO REEL AMMO REEL BULK BULK BULK BULK BULK BULK BULK SB540 SB545 SB550 SB560 SB580 SB5100 SB520 SB540 SB545 SB550 SB560 SB580 SB5100 SB520 Case Type DO-201AD 200 BOX ( pcs ) BULK PACK CARTON ( pcs ) 12,000 Case Type DO-201AD 1,200 REEL ( pcs ) Reel Size (inch) REEL PACK