SB35-40M SEME-LAB | Alldatasheet

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Prelim.9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VRRM Peak Repetitive Reverse Voltage VRSM Peak Non-Repetitive Reverse Voltage VR Continuous Reverse Voltage IO Output Current IFSM Peak Non-Repetitive Surge Current (50Hz) TSTG Storage Temperature Range TJ Maximum Operating Junction Temperature 40V 40V 40V 45V 45V 45V 35A 245A -55°C to 150°C 150°C/W MECHANICAL DATA Dimensions in mm 123 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) 3.78 (0.149)Dia. 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC 0.89 (0.035) BSC DUAL SCHOTTKY BARRIER DIODE IN TO254 METAL PACKAGE FOR HI–REL APPLICATIONS

FEATURES

 HERMETIC TO254 METAL PACKAGE  ISOLATED CASE  SCREENING OPTIONS AVAILABLE  OUTPUT CURRENT 35A L O W VF  LOW LEAKAGE TO254 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)SB35-40M M SB35-45M M Common Cathode SB35-45M SB35-40M /C49 /C51 /C50 1 = A1 Anode 1 2 = K Cathode 3 = A2 Anode 2

both diodes 1.4 per diode 2.3 1.3 SB35-40M SB35-45M Prelim .9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VF Forward Voltage IR R everse Current C d Junction Capacitance IF = 5A IF = 25A TJ = 125°C IF = 50A VR = VRR M TJ = 25°C VR = VRR M TJ = 125°C VR = 5 Vf = 1 MHz 0.49 0.85 1.25 3000 V mA pF ELECTRICAL CHARACTERISTICS (Per Diode)(TC ASE = 25°C unless otherwise stated Parameter . Unit R TH (j-a) Ma xim um Therm al R esistance Junction To Case R TH (j-c) Ma xim um Therm al R esistance Junction To Case °C /W °C /W Pulse test tp=300µs /G64/GA3 2%