SB30-45-258M SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Prelim.11/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VRRM Peak Repetitive Reverse Voltage VRSM Peak Non-Repetitive Reverse Voltage VR Continuous Reverse Voltage IO Output Current IFSM Peak Non-Repetitive Surge Current (50Hz) TSTG Storage Temperature Range TJ Maximum Operating Junction Temperature 40V 40V 40V 45V 45V 45V 30A 245A -55°C to 150°C 150°C/W MECHANICAL DATA Dimensions in mm 123 17.65 (0.695) 17.39 (0.685) 4.19 (0.165) 3.94 (0.155) Dia. 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 19.05 (0.750) 12.70 (0.500) 1.65 (0.065) 1.39 (0.055) Typ. 5.08 (0.200) BSC 3.56 (0.140) BSC 21.21 (0.835) 20.70 (0.815) 1.14 (0.707) 0.88 (0.035) 6.86 (0.270) 6.09 (0.240) DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI–REL APPLICATIONS
FEATURES
HERMETIC TO258 METAL PACKAGE ISOLATED CASE AVAILABLE IN COMMON CATHODE, COMMON ANODE AND SERIES VERSIONS SCREENING OPTIONS AVAILABLE OUTPUT CURRENT 30A L O W VF LOW LEAKAGE TO258 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) SB30-40-258MM SB30-40-258AM SB30-40-258RM SB30-45-258MM SB30-45-258AM SB30-45-258RM Common Cathode Common Anode Series Connection SB30-45-258M SB30-40-258M SB30-45-258AM SB30-40-258AM SB30-45-258RM SB30-40-258RM /C49 /C51 /C50 /C49 /C51 /C50 /C49 /C51 /C50 1 = A1 Anode 1 2 = K Cathode 3 = A2 Anode 2 1 = K1 Cathode 1 2 = A Anode 3 = K2 Cathode 2 1 = K1 Cathode 1 2 = Centre Tap 3 = A
2 Anode
Prelim .11/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VF Forward Voltage IR R everse Current C d Junction Capacitance IF = 15A TJ = 125°C IF = 20A TJ = 25°C VR = VRRM TJ = 100°C VR = VRRM TJ = 25°C VR = 5 Vf = 1 MHz 0.6 0.8 500 500 V mA /G6D A pF ELECTRICAL CHARACTERISTICS (Per Diode)(TC ASE = 25°C unless otherwise stated) THERMAL CHARACTERISTICS R TH (j-c) M axim um Therm al R esistance Junction To Case 2.0 °C /W Pulse test tp=300µs /G64/GA3/G20 2%