SB05W05C SANYO | Alldatasheet
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Technical content
Features
+ Low forward voltage (Vp max=0.55V) : Fast reverse recovery time (trr max=10ns) - Low switching noise - Low leakage current and high reliability due to highly reliable planar structure : Small-sized package permitting applied sets to be compact and slim Absolute Maximum Ratings at Ta =25°C (Value per element) unit Repetitive Peak Reverse Voltage Vprm 50 v ( Non-repetitive Peak Reverse Vrsm 55 Vv Surge Voltage Average Output Current Io 500 mA Surge Forward Current. Ipsm 50Hz sine wave, 1 cycle 5 A Junction Temperature Tj —55 to +125 °C Storage Temperature Tstg —55 to +125 °c Electrical Characteristics at Ta=25°C (Value per element) min typ max unit Reverse Voltage VR Tp=200nA 50 Vv Forward Voltage Ve Ip=500mA 0.55 v Reverse Current In Vp=25V 50 pA Interterminal Capacitance Cc Vrp=10V,f=1MHz 24 pF Reverse Recovery Time trr Ip=Ip=100mA, 10. ns See specified Test Circuit. Thermal Resistance Rthj-a 420 “c/w Marking : P trr Test Circuit DutyS10% E 10mA FL sons oon ron i Package Dimensions 1169A i { 5 tn (unit : mm) i sv 3 = oH eO-16 . iT . Electrode Connection oe "E195 4 bow . [ 28 |! rtd 2: Anode 2 anode l 4 | |, 3:Cathode 1 2 3: Cathode SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 12097GI/N120MH,JK (KOTO) 8-6450 No.3611-1/2
2 Ip - Ve IR - Vr
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