SB007-03Q SANYO | Alldatasheet
Document overview
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Technical content
Features
+ Low forward voltage (Vp max=0.55V) : Fast reverse recovery time (trr max= 10ns) - Low switching noise - Low leakage current and high reliability due to highly reliable planar structure + Ultrasmall-sized package permitting SB007-03Q-applied sets to be compact and slim Absolute Maximum Ratings at Ta=25°C unit Repetitive Peak Reverse Voltage Varm 30 v Nonrepetitive Peak Reverse Vrsm 35 v Surge Voltage Average Output Current. Io 70 mA Surge Forward Current Ipsm 50Hz sine wave,1 cycle 2 A Junction Temperature Tj —55 to +125 °C Storage Temperature Tstg —55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Reverse Voltage Vr Ip=20pA 30 Vv Forward Voltage Vr Ip=70mA 0.55 v Reverse Current Ip VR=15V 5 pA Interterminal Capacitance C Vp =10V,f=1MHz 3.0 pF Reverse Recovery Time trr {Ip=Ip=10mA 10 ns (See specified Test Circuit. Marking :G trr Test Circuit DutyS 10% i wf ia i or a a Package Dimensions 1197A _, 10ps ov a (unit : mm) ous § AQ x Ig I B im = t 1 ~ boa s 1: Anode tL ty 3: Cathode -H-22 sanyo: MCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10;1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D1096GI/D288TA,TS No.2939-1/2
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