S9018T_15 SECOS | Alldatasheet
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Any changing of specification will not be informed individual S9018T NPN Plastic-Encapsulate Transistors TO-92 FEATURE Power dissipation PCM : 0.4 W (Tamb=25 C) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 o C o C o 4.55±0.2 3.5 ±0. 2 4.5±0.214.3 ±0. 2 2.54 ±0. 1 (1.27 Typ.) 0.46 +0.1–0.1 0.43 +0.08 –0.07 13 2 1: Emitter 2: Base 3: Collector 1.25–0.2 +0.2 01-Jun-2002 Rev. A Page1 of 1 ELECTRICAL CHA RACTERISTICS (Tamb=25 C u nless o therwise sp ecified) Parameter Symbol Test conditions MIN TYP MAX UNIT o Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1mA, I B=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4 V Collector cut-off current ICBO V CB= 20V, IE=0 0.1 µA Collector cut-off current ICEO V CE= 15V, IB=0 0.1 µA Emitter cut-off current IEBO V EB= 3V, IC=0 0.1 µA DC current gain hFE(1) V CE= 5V, IC= 1mA 28 270 Collector-emitter saturation voltage VCE(sat) I C=10mA, IB=1mA 0.5 V Base-emitter saturation voltage VBE(sat) I C=10mA, IB=1mA 1.4 V Transition frequency fT VCE=5 V, IC=5 mA f =400MHz 600 MHz CLASSIFICATION OF h FE(1) Rank D E F G H I J Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free