MMBD5148 SECOS | Alldatasheet
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Technical content
Any changing of specification will not be informed individual MMBD5148 Surface Mount Switching Diode L A B S GV 1 2 K J C HD Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23
FEATURES
/c183 Fast Switching Speed /c183 Surface Mount Package Ideally Suited for Automatic Insertion /c183 For General Purpose Switching Applications /c183 High Conductance MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient R /C0113JA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient R /C0113JA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING 5148=5H, 5148A=D4, 5148C=D5, 5148S=D6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) V(BR) 100 — Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125°C) IR IR2 IR3 1.0 3.0 100 µAdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF 0.55 0.67 0.75 0.7 0.82 1.1 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr — 4.0 ns Capacitance (VR = 0 V) C — 4 pF http://www.SeCoSGmbH.com Elektronische Bauelemente MMB D5148 MMB D5148A MMB D5148C MMB D5148S 1 2 3 3 3 1 2 1 2 1 2 01-Jun-2002 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free