S9015 SKTECHNOLGY | Alldatasheet
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Vg oz: Su 4 $9015 SHIKUES PNP Silicon Epitaxial Planar Transistors SOT-23 for switching and AF amplifier applications 3 3 4 7 1 2 1: Base 2: Emitter 3: Collector Absolute Maximum Ratings (T, = 25 °C} Parmeter Sambo [Vat [| Collector Base Votage | veo | 50 | ov | Storage Temperature Range - 55 to + 150 Characteristics at T, = 25 °C | Parameter | Symbot | min. | Max. | Unit _| DC Current Gain at -Vce= 5 V, -lc=1mA Current Gain Group Hee 200 450 Collector Base Cutoff Current 4 at -Vos= 50 V aiid Emitter Base Cutoff Current Collector Base Breakdown Voltage YV, Vv at -Io = 100 pA (eR\\cB0 Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage V, Vv at -le= 100 pA APRS) Collector Emitter Saturation Voltage nV, Vv at -lc = 100 mA, -ls= 5 mA iis an Base Emitter Saturation Voltage ‘NV, 1 v at -Ilo = 100 mA, -Ip= 5 mA Bete. Gain Bandwidth Product Output Capacitance at -Vop= 10 V, f= 1 MHz Cos e PF Noise Figure REV.08 1 of 2