S9015

SS9015 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC ue D ff 7364142 ooO74OS & Af 7-29. /9 $$S9015 PNP EPITAXIAL SILICON TRANSISTOR OO eee LOW FREQUENCY, LOW NOISE AMPLIFIER - [_,., * Complement to SS9014 . ABSOLUTE MAXIMUM RATINGS (T,=25°C) : ey Collector-Base Voltage Veso -50 v <i Coilector-Emitter Voltage Vero 45 Vv Emitter-Base Voltage Veso 5 Vv Collector Current te 100 mA , . Collector Dissipation Po 450 mw Junction Temperature Ti 150 °c | Storage Temperature Tsto 554150 | °C A. Gene 2 ase 2, cotectr ELECTRICAL CHARACTERISTICS (T.=25°C) | [sevens [ma | rare [om [oe Dr [om . Collector-Base Breakdown Voltage BVca0 o=—100pA, le=0 . -60 ‘ v Collector-Emitter Breakdown Voltage | BVcso kc=—1MA, k=O -45 Vv Emitter-Base Breakdown Voltage BV eso le=—100pA, Ic=O -5 v Collector Cutoff Current keeo Vea=~50V, le=O —50 nA Emitter Cutoff Current levo Vea=—SV, lo=O0 -50 nA OC Current Gain Dee Vee=—5V, lo=—1mA 60 200 600 Collector-Base Saturation Voltage Vee(sat) le=—100MA, Ig=~5mA 0.2 0.7 v Base-Emitter Saturation Voltage Vee(sat) Ic=—100mA, Ip=—5mA 0.82 -1.0 v Base-Emitter On Voltage Vee(on) Vee= ~5V. p= 2mA 0.6 | -0.65 | -0.75 v Output Capacitance Cob Vea=—10V, k=O 45 7.0 pF f=1MHz Current Gain-Bandwidth Product fr Vee =5V, le=—10mA, 100, 190 MHz Noise Figure NF Voe=—5V, e=—0.2mA O7 10 dB f=1KHz, Rs =1KO. hre CLASSIFICATION in Pe [ee [aoe | me | eee & SAMSUNG SEMICONDUCTOR 67s

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SALIENCE) ERE Resiiiiiimentt i Secisiinciit| a COC COMI ea COO TTT ‘al lum couoTON cunREMT amas, couscron coment SASEEMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE nn COULESTORSAETIEN SATURATION VOLTAGE a fesse ee 3 =e 8 ok EE a 204 . a Seer eset . ag A ¢ Eee HH pi ea 5 afl § Asoo SE gg ements eemeserit eee cea 3 FS NSUH CTT fio 1-H |} NO 2 _ Eee eine | CMHC) CUTIE II “ler 93-08 -1_-9 -8 10-20-80 -100 Sy ca =8 =10 90-80 100-200 na COLECTOn Gunmen Vo COLLECTORGASE VOLTAGE een & SAMSUNG SEMICONDUCTOR : 676

SAMSUNG SEMICONOUCTOR INC hue 0 BPrseun42 oooz4o7 T ff : T3l~ (7 $S9016 NPN EPITAXIAL. SILICON TRANSISTOR ——eeeeOEOO . a i AM CONVERTER, FM/RF AMPLIFIER OF | LOW NOISE. ros * High total power dissipation. (PT=400mW) { ABSOLUTE MAXIMUM RATINGS (T, =25°C) BiB Collector-Base Voltage Vso 30 v Las” t Collector-Emitter Voltage * Vero 20 Vv ‘. t Emitter-Base Voltage Veso 4 v : Collector Current le 26 mA " Collector Dissipation Po 400 mw Junction Temperature qi 150 °c Storage Temperature Taig. | -s5~150 | °c 1 miter 2, Base 9, Cotecor ELECTRICAL CHARACTERISTICS (T, =25°C) ee Collector-Bese Breakdown Voltage | BVexo | b= 100uA, le=0 30 v Callector-Emitter Breakdown Voltage | BVero | b=1mA, =O 20 v Emitter-Baso Breakdown Voltage | BVen | le=100uA, le=0 4 v Collector Cutoff Current kao | Vea=30V, le=0 100 | nA Emitter Cutoff Current . lea Ves=3V, =O 100 nA DC Current Gain hee Voe=6V, lo= 1mA 28 | 90 | 198 . Collector-Emitter Saturation Voltage | Vee(sat) | fo=10mA, = imA ot | o3 | v Base-Emitter On Voltage Vee (on) | Voe=SV, lem 1mA 0.72 v ‘Output Capacitance Cob Vea=10V, le=O 1.2 1.6 pF f=1MHi Current Galn-Bandwidth Product | tr Ver=V. gm tma 400 | 620 Miz Noise Figure NF Ver=5V b= 1.0mA 3.0 5.0 dB f=100MHz, Rs=500 hre CLASSIFICATION > . & SAMSUNG SEMICONDUCTOR . 677 { .

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“SAMSUNG SEMICONDUCTOR INC LYE D Pescuise 0007409 3 I ‘$$9018 NPN EPITAXIAL SILICON TRANSISTOR ’ T-31-19 AMIFM IF AMPLIFIER, LOCAL OSCILLATOR — OF FMIVHF TUNER Toe + * High Current Galn Bandwidth Product f,=1,100 MHz (Typ) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) a [___cnwciite [sy [ane wnt ye” Collector-Emitter Voltage Veeo 15 v . . Emitter-Base Voltage Ven 5 v Collector Current ke 50 mA ' Collector Dissipation Po 400 mW Junction Temperature Tj 160 “Cc ‘Storage Temperature Tstg ~56~150 | °c 1. Enter 2, Base 2. Coector ELECTRICAL CHARACTERISTICS (Ta=25°C) E [cwesonie Trae [toate [we [tw [mr [a] Collector-Base Breakdown Voltage | BVex | le=100yA, le=0 30 v . Collector-Emitter Breakdown Voltage | BVcco | b=1,0mA, k=O . 16 v Emitter-Base Breakdown Voltage | BVen | le= 100A, e=0 5 v Collector Cutoff Current oo Voa=12V, le=0 50 | nA DO Current Gain bre Voe™5V, I= 1.0mA 28 100 | 198 Collector-Emitter Saturation Voltage | Vee(sat) | l= 10mA, l= 1mA os v . Output Capacitance Cob Vee=10V, le=0 13] 4.7 | pF t=1MHz ‘Current Gain-Bandwidth Product fr Vee=5V, lo=5mA 700 1100 MHz hre CLASSIFICATION Jommanl o Te Te Tote] [fen & SAMSUNG SEMICONDUCTOR 679

SAMSUNG SEMICONDUCTOR INC ANE O | Rae Qoor74ic + I $S9018 NPN EPITAXIAL SILICON TRANSISTOR _ - —— Eee . . 1-31-19 STATIC CHARACTERISTIC 06 CURRENT GAIN 19 000 ° LT Eien et ttt +4 : Pt ee aba | 00 FH a a ‘Tyee 5 CO Poet C—O ae eS i= sscseee a ae jae Ts 100 Hh plat t —t_| 2 ee ee ae i ene i 2 TFELELLLEL | | ot Hi TT rr, Hf nee eV HERR TDI PIE SCOTT . vet UETON THE VLG vin cousevn coment no CURRENT GAIN-SANDWIDTH PRODUCT q SOLLEGTOREMITTEN SATURATION VOLTAGE i 5 EATS EHH ETP Sg COCCI Tr i ae a | ” | oe sie oe a a | Fy esi oe eee ee CAVA CHR 3 “RRS soot ALI TTI | Fe | Foe} i Po a eo LUTTE TTI 1) = av oLzs08 ct Vite counren coment Ourrur ‘CAPACITANCE: . at) . : Re

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