S9015 HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） S9 015 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Complementary to S9014 Rank L H Range 200-450 450- 1000 P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C = -0.1mA, I B =0 -45 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50 V, I E =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A DC current gain h FE V CE =-5V, I C = -1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =-100mA, I B = -10mA -0.3 V Base-emitter saturation voltage V BE (sat) I C =-100mA, I B =-10mA -1 V Transition frequency f T V CE =-5V, I C = -10mA 30MHz

150 MHz

C CBO Marking M6 M7

H igh Diode Semiconductor Typical Characteristics -0.1 -1 -10 -0.1 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 -0 -2 -4 -6 -8 -0.1 -1 -10 -100 100 1000 -1 -10 -100 -0.1 -0.1 -10 -100 -1 -10 -100 -0.01 -0.1 -20 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V R (V) COMMON EMITTER V CE =-5V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) -6uA -8uA -10uA -12uA -16uA -20uA -18uA -14uA COMMON EMITTER T a =25 -4uA I B =-2uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER V CE = -5V I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -0.2-0.2 I C f T h FE β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-5V V BE I C T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) β=10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor