S9014-TO-92 HDSEMI | Alldatasheet

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Technical content

Features

H igh Diode Semiconductor TO- 9 2 Symbol Parameter Value Unit V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） S9 014 TRANSISTOR( NP N ) CBO TO-92 Plastic-Encapsulate Transistors E B C High Total Power Dissipation.(P C =0.45W) High hFE and Good Linearity Complementary to S9015 Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 0.1 μA Collector cut-off current I CEO V CE =35V, I B =0 1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA DC current gain h FE V CE =5V, I C = 1mA 60 1000 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA f=30MHz

150 MHz

Range 60-150 100-300 200-600 400-1000

H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 100 1000 0.1 1 10 100 200 400 600 800 1000 1200 0.1 1 10 0.1 02 5 5 0 75 100 1 25 100 200 300 400 500 11 0 100 1000 1 10 100 100 1000 0.1 1 10 100 100 1000 18uA 16.2uA 14.4uA 12.6uA 108uA 9uA 7.2uA 5.4uA 3.6uA I B =1.8uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic V BE Ta=100 Ta=25 VCE=5V 5000 COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) Ta=25 Ta=100 β=20 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat f=1MHz I E =0/ I C Ta=25 o C C ob C ib V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) Pc — — Ta I C fT — — VCE=5V Ta=25 o C I C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) 2000.4 Ta=100 o C Ta=25 o C V CE =5V I C h FE — — DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) Ta=25 Ta=100 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) β=20 COLLECTOR CURRENT I C (mA) I C V CEsat

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4