S9014 KOOCHIN | Alldatasheet
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Technical content
S 9 0 1 4 TRANSISTOR (NPN)
FEATURES
MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C= 100μA, I E=0 50 V Collector-emitter breakdown voltage V(BR)CEO I C= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO I E=100μA, IC=0 5 V Collector cut-off current ICBO V CB=50 V , I E=0 0.1 μA Collector cut-off current ICEO V CE=35V , I B=0 0.1 μA Emitter cut-off current IEBO V EB= 3V , I C=0 0.1 μA DC current gain hFE V CE=5V, I C= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) I C=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) I C=100 mA, IB= 5mA 1 V Transition frequency fT VCE=5V, I C= 10mA f=30MHz 150 MHz CLASSIFICATION OF h FE Rank L H Range 200-450 450-1000 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
T y p i c a l C h a r a c t e r i s t i c s S 9 0 1 4