S9013W-SOT-323 HDSEMI | Alldatasheet

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H igh Diode Semiconductor SOT- 3 23 Symbol Parameter Value Unit V Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） SOT-323 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) 0.5 A EB C CBO B EC S9013W High Collector Current Excellent HFE Linearity 625 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 100 nA Collector cut-off current ICEO VCE=20V, IB=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 0.7 V Transition frequency fT VCE=6V,IC=20mA , f=30MHz 150 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 8 pF RANK L H J RANGE 120–200 200–350 300–400 MARKING J3

H igh Diode Semiconductor Package Outline Dimensions SOT-323 Suggested Pad Layout SOT-323 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

Reel Taping Specifications For Surface Mount Devices-SOT-323 H igh Diode Semiconductor