S9013R GWSEMI | Alldatasheet
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/g122Complementary to S9012 /g122 Excellent h FE linearity /g55/g50/g16/g28/g21/g3 1. EMITTER 2. BASE 3. COLLECTOR /g48/g36/g59/g44/g48/g56/g48/g3/g53/g36/g55/g44/g49/g42/g54/g3/g11/g55 /g68 /g32/g21/g24/g1071/g3/g88/g81/g79/g72/g86/g86/g3/g82/g87/g75/g72/g85/g90/g76/g86/g72/g3/g81/g82/g87/g72/g71/g12/g3 /g54/g92/g80/g69/g82/g79/g3 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g51/g68/g85/g68/g80/g72/g87/g72/g85/g3/g57/g68/g79/g88/g72/g3/g56/g81/g76/g87/g3 /g57 /g38/g37/g50 /g3 Collector-Base Voltage 40 V /g57 /g38/g40/g50 /g3 Collector-Emitter Voltage 25 V /g57 /g40/g37/g50 /g3 Emitter-Base Voltage 5 V /g44 /g38 /g3 Collector Current -Continuous 0.5 A /g51 /g39 /g3 Collector Power Dissipation 625 mW Operation Junction and Storage Temperature Range /g1071TJ,/g55/g86/g87/g74 /g3 /g53 /g537/g45/g36 /g3 /g3Thermal Resistance /g73rom Junction /g87o Ambient /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g1071/W200 Equivalent Circuit Plastic-Encapsulate Transistors S9013R TRANSISTOR(NPN) -SERIES /g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 a T =25/g1071 unless otherwise specified /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g51/g68/g85/g68/g80/g72/g87/g72/g85/g3Symbol Test conditions Min Typ M ax Unit /g38/g82/g79/g79/g72/g70/g87/g82/g85/g16/g69/g68/g86/g72/g3/g69/g85/g72/g68/g78/g71/g82/g90/g81/g3/g89/g82/g79/g87/g68/g74/g72/g3V (BR) CBO /g3I C = 100μA , I E =0 40 V /g38/g82/g79/g79/g72/g70/g87/g82/g85/g16/g72/g80/g76/g87/g87/g72/g85/g3/g69/g85/g72/g68/g78/g71/g82/g90/g81/g3/g89/g82/g79/g87/g68/g74/g72/g3V (BR) CEO /g3I C = 1mA , I B =0 25 V /g40/g80/g76/g87/g87/g72/g85/g16/g69/g68/g86/g72/g3/g69/g85/g72/g68/g78/g71/g82/g90/g81/g3/g89/g82/g79/g87/g68/g74/g72/g3V (BR) EBO /g3I E = 100μA , I C =0 5 V /g38/g82/g79/g79/g72/g70/g87/g82/g85/g3/g70/g88/g87/g16/g82/g73/g73/g3/g70/g88/g85/g85/g72/g81/g87/g3I CBO V CB = 40V , I E =0 0.1 μA /g38/g82/g79/g79/g72/g70/g87/g82/g85/g3/g70/g88/g87/g16/g82/g73/g73/g3/g70/g88/g85/g85/g72/g81/g87/g3I CEO V CE =20V , I E =0 0.1 μA /g40/g80/g76/g87/g87/g72/g85/g3/g70/g88/g87/g16/g82/g73/g73/g3/g70/g88/g85/g85/g72/g81/g87/g3I EBO V EB = 5V, I C =0 0.1 μA h FE(1) V CE =1V, I C =50mA 64 400 /g39/g38/g3/g70/g88/g85/g85/g72/g81/g87/g3/g74/g68/g76/g81/g3 h FE(2) V CE =1V, I C = 500mA 40 /g38/g82/g79/g79/g72/g70/g87/g82/g85/g16/g72/g80/g76/g87/g87/g72/g85/g3/g86/g68/g87/g88/g85/g68/g87/g76/g82/g81/g3/g89/g82/g79/g87/g68/g74/g72/g3V CE(sat) I C = 500mA, I B = 50mA 0.6 V /g37/g68/g86/g72/g16/g72/g80/g76/g87/g87/g72/g85/g3/g89/g82/g79/g87/g68/g74/g72/g3V BE(sat) I C = 500mA, I B = 50mA 1.2 V /g55/g85/g68/g81/g86/g76/g87/g76/g82/g81/g3/g73/g85/g72/g84/g88/g72/g81/g70/g92/g3 f T V CE =6V,I C =20mA,f=30MHz 150 MHz /g3/g38/g47/g36/g54/g54/g44/g41/g44/g38/g36/g55/g44/g50/g49/g3/g50/g41/g3/g75 /g41/g40/g11/g20/g12 /g3 /g53/g68/g81/g78/g3D E F G H I J /g53/g68/g81/g74/g72/g364-91 78 -112 96 -135 112 -166 144 -202 190 -300 300 -400
TRANSISTOR(NPN) -SERIES Typical Characteristics 04 81 2 1 6 2 0 100 11 0 100 100 1000 1 10 100 100 0.1 1 10 10 100 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 700 0.1 100 1 10 100 100 1000 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER T a =25 ć I B =60uA 120uA 180uA 240uA 300uA 360uA 480uA 420uA f T — —I C h FE COMMON EMITTER V CE =1V 3 30 500 T a =100 ć T a =25 ć DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 2000 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 ć T a =100 ć I C V CEsat — — 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 ć V CB / V EB C ob / C ib — — CAPACITANCE C (pF) 300 2 30 V CE =6V T a =25 ć TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) ć P C — — T a V BE I C — — 0.3 T a =25 ć T a =100 ć COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) T a =25 ć T a =100 ć 500 I C V BEsat — —
TRANSISTOR(NPN) -SERIES TO-9 PACKAGE OUTLINE /g48/g76/g81/g48/g68/g91 /g48/g76/g81/g48/g68/g91 A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D4 ./g22/g19/g194.700/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g25/g28/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g27/g24 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 /g301 1.600 0.063 h 0.000 0.380 0.000 0.015 /g54/g92/g80/g69/g82/g79/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g48/g76/g79/g79/g76/g80/g72/g87/g72/g85/g86 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g44/g81/g70/g75/g72/g86 1.270 TYP 0.050 TYP