S9013-SOT-23 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） S9 013 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) High Collector Current. Complementary to S9012. Excellent h FE Linearity. Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 uA Collector cut-off current I CEO V CE =20V, I B =0 0.1 uA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 uA h FE(1) V CE =1V, I C =50mA 120 400 DC current gain h FE(2) V CE =1V, I C =500mA 40 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B =50mA 0.6 V Base-emitter saturation voltage V BE(sat) I C =500mA, I B =50mA 1.2 V Base-emitter voltage V BE V CB =1V,I C =10mA, 0.7 V Transition frequency f T V CE =6V,I C =20mA, f=30MHz 150 MHz Collector output capacitance C ob V CB =6V, I E =0, f=1MHz 8 pF RANK L H J RANGE 120-200 200-350 300-400 EB C CBO

H igh Diode Semiconductor Typical Characteristics 1 10 100 100 1000 1 10 100 100 0.1 1 10 100 100 1000 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 048 1 2 1 6 2 0 100 f T —— I C h FE COMMON EMITTER V CE =1V 3 30 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 300 10 30 V CE =6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a V BE I C 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COMMON EMITTER T a =25

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor