S9013 KOOCHIN | Alldatasheet
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Technical content
S9013 TRANSISTOR (NPN)
FEATURES
MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current I CBO V CB=40V, IE=0 0.1 μA Collector cut-off current I CEO V CE=20V, IB=0 0.1 μA Emitter cut-off current I EBO V EB= 5V, IC=0 0.1 μA h FE(1) V CE=1V, IC= 50mA 120 400 DC current gain h FE(2) V CE=1V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) I C=500mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) I C=500mA, IB= 50mA 1.2 V Transition frequency f T VCE=6V, I C= 20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
Typical Characteristics S9013