S9013

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN)

FEATURES

z High Collector Current. z Complementary to S9012. z Excellent h FE Linearity. MARKING: J3 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current 500 mA P C Collector Power Dissipation 300 mW R ΘJA Thermal Resistance From Junction To Ambient 416 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 uA Collector cut-off current I CEO V CE =20V, I B =0 0.1 uA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 uA h FE(1) V CE =1V, I C =50mA 120 400 DC current gain h FE(2) V CE =1V, I C =500mA 40 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B =50mA 0.6 V Base-emitter saturation voltage V BE(sat) I C =500mA, I B =50mA 1.2 V Base-emitter voltage V BE V CB =1V,I C =10mA, 0.7 V Transition frequency f T V CE =6V,I C =20mA, f=30MHz 150 MHz Collector output capacitance C ob V CB =6V, I E =0, f=1MHz 8 pF CLASSIFICATION OF h FE(1) RANK L H J RANGE 120-200 200-350 300-400 SOT–23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Oct,2014 JC(T

0.1 1 10 100 100 1000 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 048 1 2 1 6 2 0 100 f T —— I C h FE COMMON EMITTER V CE =1V 3 30 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 300 10 30 V CE =6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a V BE I C 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COMMON EMITTER T a =25 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Oct,2014 Typical Characteristics

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2014

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2014