S9012-TO-92 HDSEMI | Alldatasheet

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Features

H igh Diode Semiconductor TO- 9 2 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 625 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） S9 012 TRANSISTOR( P NP ) High Collector Current. Complementary to S9013. Excellent h FE Linearity. CBO TO-92 Plastic-Encapsulate Transistors E B C P a r a m e t e r Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA,I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μ A Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A h FE V CE =-1V,I C =-50mA 64 400 DC current gain Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA 30MHz

150 MHz

Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400

H igh Diode Semiconductor Typical Characteristics -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 100 200 300 400 500 600 700 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 COMMON EMITTER T a =25 -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C —— V CE I B =-2uA -4uA -500 V BE I C T a =25 T a =100 COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C COMMON EMITTER V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 400 -20 V CB EB C ob ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) C ib C ob f=1MHz I E =0/I C T a =25 P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) f T — — -500 T a =100 T a =25 β=10 I C V BEsat — — BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) -500 -500 β=10 T a =25 T a =100 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 h FE —— I C 500 -500 V CE =-1V

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4