S9012-SOT-23 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） 2T1 S9 012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) High Collector Current. Complementary to S9013. Excellent h FE Linearity. RANK L H J RANGE 120-200 200-350 300-400 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.1mA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-0.1mA, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 uA Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 uA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.1 uA DC current gain h FE V CE =-1V, I C =-50mA 120 400 Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.2 V Transition frequency f T V CE =-6V,I C =-20mA, f=30MHz 150 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 5 pF EB C CBO

H igh Diode Semiconductor Typical Characteristics -1 -10 -100 100 200 300 400 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -10 -100 500 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -20 -40 -60 -80 -100 f T —— I C h FE COMMON EMITTER VCE=-1V -500 Ta=100 Ta=25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 Ta=25 Ta=100 I C V CEsat -500 100 100 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C Ta=25 V CB / V EB C ob / C ib CAPACITANCE C (pF) VCE=-6V Ta=25 o C TRANSITION FREQUENCY f T (MHz) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) Pc —— Ta β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) Ta=25 Ta=100 -500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -400uA -350uA -300uA -250uA -200uA -150uA -100uA I B =-50uA COMMON EMITTER Ta=25

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor