S9012 KOOCHIN | Alldatasheet
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Technical content
S9012 TRANSISTOR (PNP)
FEATURES
MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted℃ ) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO V CB=-40V, IE=0 -0.1 μA Collector cut-off current ICEO V CE=-20V, IB=0 -0.1 μA Emitter cut-off current IEBO V EB= -5V, IC=0 -0.1 μA DC current gain hFE V CE=-1V, IC= -50mA 120 400 Collector-emitter saturation voltage VCE(sat) I C=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C=-500mA, IB= -50mA -1.2 V Transition frequency fT VCE=-6V, I C= -20mA f=30MHz
150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF CLASSIFICATION OF h FE Rank L H J Range 120-200 200-350 300-400 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
Typical Characteristics S9012