S9012

S9012 GWSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

MARKING: 2T1 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitte r -Base V olta g e V I C Collector Current -Continuous -500 mA P C Collector Power Dissipation 300 mW T j Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = -100 µA , I E -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100 µA , I C V Collector cut-off current I CBO V CB =-40V, I E -0.1 µA Collector cut-off current I CEO V CE =-20V, I B -0.1 µA Emitter cut-off current I EBO V EB = -5V, I C -0.1 µA DC current gain h FE V CE =-1V, I C = -50mA 120 200 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA 30MHz 150 MHz Collector output capacitance C ob V CB 10V, I E =0, f=1MHz pF BASE SOT-23 EMITTER COLLECTOR S9012 TRANSISTOR(PNP)

TRANSISTOR(PNP)

TRANSISTOR(PNP) Plastic surface mounted package; 3 leads SOT-23 PACKAGE OUTLINE