S8550-TO-92 HDSEMI | Alldatasheet

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Features

H igh Diode Semiconductor TO- 9 2 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current PC Collector Power Dissipation 625 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） TRANSISTOR( P NP ) CBO TO-92 Plastic-Encapsulate Transistors E B C S8550 Complimentary to S8050 Collector current: I C =-0.5A -0.5 A Para meter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100u A , I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100uA, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -0.1 uA Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 uA Emitter cut-off current I EBO V EB = - 3V, I C =0 -0.1 uA h FE(1) V CE = -1V, I C = -50mA 85 400 DC current gain h FE(2) V CE = -1V, I C = -500mA 50 Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.2 V Transition frequency f T V CE =- 6V, I C =-20mA, f = 30MHz

150 MHz

Range 85-160 120-200 160- 300 300- 400 HD-TO0.35

H igh Diode Semiconductor Typical Characteristics -0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 125 250 375 500 625 750 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER T a =25 -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I B =-40uA -80uA -500 V BE I C T a =25 T a =100 COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C COMMON EMITTER V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 400 -20 V CB EB C ob ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) C ib C ob f=1MHz I E =0/I C T a =25 Static Characteristic P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) f T -500 T a =100 T a =25 β=10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) -500 -500 β=10 T a =25 T a =100 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 h FE —— I C 500 -500

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4