S8550-SOT-23 HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RANK L H J RANGE 120-200 200-350 300-400 CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） Complimentary to S8050 Collector Current: I C =-0.5A 2TY S8550 SOT-23 Plastic-Encapsulate Transistors P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -0.1 μ A Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 μ A Emitter cut-off current I EBO V EB = -3V, I C =0 -0.1 μ A h FE(1) V CE = -1V, I C = -50mA 120 400 DC current gain h FE(2) V CE = -1V, I C = -500mA 50 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE = -6V, I C = -20mA 30MHz

150 MHz

TRANSISTOR( P NP ) EB C CBO

H igh Diode Semiconductor Typical Characteristics -0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER T a =25 -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C —— V CE I B =-40uA -80uA -500 V BE I C T a =25 T a =100 COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C COMMON EMITTER V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 400 -20 V CB EB C ob ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) C ib C ob f=1MHz I E =0/I C T a =25 P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) f T -500 T a =100 T a =25 β=10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) -500 -500 β=10 T a =25 T a =100 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 h FE —— I C 500 -500

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor