S8550 KOOCHIN | Alldatasheet
Document overview
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Technical content
- BASE 2. EMITTER 3. COLLECTOR S8550 TRANSISTOR (PNP)
FEATURES
z Collector current: IC=0.8A MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -100μA, I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current I CBO V CB= -40V, IE=0 -0.1 μA Collector cut-off current I CEO V CE= -20V, IB=0 -0.1 μA Emitter cut-off current I EBO V EB= -3V, IC=0 -0.1 μA h FE(1) V CE= -1V, IC= -50mA 120 350 DC current gain h FE(2) V CE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) I C=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C=-500mA, IB= -50mA -1.2 V Transition frequency f T VCE= -6V, IC= -20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank L H Range 120-200 200-350
T y p i c a l C h a r a c t e r i s t i c s S 8 5 5 0