S8050 WEITRON | Alldatasheet

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Technical content

C C WEITRON http://www.weitron.com.tw NPN General Purpose Transistors (Ta=25 C) 5.0 500 Total Device Dissipation T =25 C 0.625 W Junction Temperature T j 150 Storage, Temperature -55 to +150 A TO-92 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR Characteristics Symbol Min Max Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (I C= 0.1 mAdc, I B=0) Collector-Base Breakdown Voltage (I C= 100 µAdc, I E=0) Emitter-Base Breakdown Voltage (I E= 100 µAdc, I C=0) Collector Cutoff Current (VCE= 20 Vdc, I =0) Collector Cutoff Current (VCB= 40 Vdc, I E=0) Emitter Cutoff Current (VEB= 3.0V c, I =0) V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO 5.0 0.1 Vdc Vdc Vdc uAdc uAdc uAdc 0.1 0.1 d B C

Current-Gain-Bandwidth Product (IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz) fT MHz Collector-Emitter Saturation Voltage (IC= 500 Adc, IB= 50 mAdc) Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= 50 mAdc) hFE hFE VCE(sat) VBE(sat) Vdc Vdc ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max - - 150 S8050 WEITRON http://www.weitron.com.tw (IC= 50 Adc, VCE=1.0 Vdc) DC Current Gain DC Current Gain (IC= 500 mAdc, VCE= 1.0 Vdc) 85 300(1) (2) 50 0.6 1.2 Classification of hFE(1) Rank B C D Range 85-160 120-200 160-300 TYP

http://www.weitron.com.tw

http://www.weitron.com.tw S8050 Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10