S8050-TO-92 HDSEMI | Alldatasheet

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H igh Diode Semiconductor TO- 9 2 Symbol Parameter Value Unit V Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current PC Collector Power Dissipation 625 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） TRANSISTOR( NP N ) CBO TO-92 Plastic-Encapsulate Transistors E B C S8050 Complimentary to S8550 Collector current: I C =0.5A 0.5 A Pa rameter Symbol Test conditions Min T yp M ax Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μA , I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E = 100 μ A, I C =0 5 V Collector cut-off current I CBO V CB = 40 V , I E =0 0.1 μA Collector cut-off current I CEO V CE = 20 V , I B =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA h FE(1) V CE = 1V, I C = 50mA 85 400 DC current gain h FE(2) V CE = 1V, I C = 500mA 50 Collector-emitter saturation voltage V CE (sat) I C =500mA, I B =50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500mA, I B =50mA 1.2 V Transition frequency f T V CE = 6V, I C =20mA f = 30MHz 150 MHz Rank B C D D3 Ra nge 85-160 120-200 160-300 300-400 HD-TO0.35

H igh Diode Semiconductor Typical Characteristics 04 8 12 1 6 2 0 100 11 0 100 100 1000 1 10 100 100 0.1 1 10 10 100 100 1000 0 25 50 75 100 125 150 125 250 375 500 625 750 0.1 100 1 10 100 100 1000 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER T a =25 I B =60uA 120uA 180uA 240uA 300uA 360uA 480uA 420uA f T — — I C h FE — — COMMON EMITTER V CE =1V 3 30 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 2000 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat — — 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib — — CAPACITANCE C (pF) 300 2 30 COMMON EMITTER V CE =6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C — — T a V BE I C — — 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat — —

H igh Diode Semiconductor Package Outline Dimensions Suggested Pad Layout TO- 9 2 TO- 9 2 SYMBOL MIN MAX SYMBOL MIN MAX A 4.1 4.3 K 0.36 0.56 B R2.0 R2.2 L 1.35 1.45 C 4.1 M 12.00 12.5 D 1.1 1.2 N 1.24 1.3 E 3.13 3.33 O 5° F Φ1.48 Φ1.52 P 5° G 4.4 4.6 Q 0.37 0.39 H 2.2 2.3 I 0.36 0.56 J 0.5 0.6 单位：mm

H igh Diode Semiconductor TO-92 7DSHDQG5HHO Packge Box Box Size(mm) Carton Carton Size(mm) TO-92 2000PCS 343×158×42 20000PCS 470×358×180 Symbol mm Inches Min Nom Max Min Nom Max P 12.4 — 13 0.488 — 0.512 F1,F2 2.75 3.00 3.25 F3,F4 2.75 3.00 3.25 ︱ F1-F2︱ — — 0.4