S8050 KOOCHIN | Alldatasheet
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Technical content
S8050 TRANSISTOR (NPN)
FEATURES
z Collector Current: IC=0.8A MARKING: J3Y MAXIMUM RATINGS (T A=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO I C=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current I CBO V CB=40 V , I E=0 0.1 μA Collector cut-off current I CEO V CB=20V , I E=0 0.1 μA Emitter cut-off current I EBO V EB= 5V , I C=0 0.1 μA H FE(1) V CE=1V, I C= 50mA 120 350 DC current gain H FE(2) V CE=1V, I C= 500mA 50 Collector-emitter saturation voltage VCE(sat) I C=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) I C=500 mA, IB= 50mA 1.2 V Transition frequency f T VCE=6V, I C= 20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank L H Range 120-200 200-350 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR
T y p i c a l C h a r a c t e r i s t i c s S 8 0 5 0