S8050 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =40 V , I E =0 0.1 μ A Collector cut-off current I CEO V CB =20V , I E =0 0.1 μ A Emitter cut-off current I EBO V EB = 5V , I C =0 0.1 μ A h FE(1) V CE =1V, I C = 50mA 120 400 DC current gain h FE(2) V CE =1V, I C = 500mA 50 Collector-emitter saturation voltage V CE (sat) IC=500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz

150 MHz

RANGE 120-200 200-350 300-400 CLASSIFICATION OF h FE Electrical Characteristics (T=25℃ Unless otherwise specified） Complimentary to S8550 Collector Current: I C =0.5A J3Y S8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) EB C CBO

H igh Diode Semiconductor Typical Characteristics 100 1000 11 0 1 00 100 1000 0 25 50 75 100 125 150 100 150 200 250 300 350 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1 10 100 1000 100 1000 100 120 140 1 10 100 1000 100 1000 300 303 1500 300 COMMON EMITTER V CE =1V COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C V BE T a =100 T a =25 I C f T TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =10V T a =25 COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (V) I C V BEsat β=10 T a =100 T a =25 1500 C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) V CB / V EB C ob / C ib f=1MHz I E =0/I C T a =25 200 300303 300 3 30 300 300303 300 COMMON EMITTER V CE =1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =100 T a =25 I C h FE 1500 COMMON EMITTER T a =25 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic 30.3 β=10 T a =100 T a =25 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat 1500

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor