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—_— —$—$ EE Silicon Controlled Rectitiors File Number 1628 $6000D, S6000M, S6000N High Voltage, Medium Current Silicon Controlled Rectifiers : For Power Switching, Power Contro!, and Motor Speed Control ‘TERMINAL DESIGNATIONS i Features: = 00V, 125 Deg. C T, Operating " High dv/at and di/dt Capability GATE = Low Switching Losses — = High Pulse Current Capability ANooe = prove = Low Forward and Reverse Leakage (ru ——————— «= Sipos Oxide Glass Multilayer Passivation System ens = Advanced Unisurface Construction — cat

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The $6000 series are high voltage, medium current silicon These Thyristors feature an advanced unisurface construc- ; controlled rectifiers designed for switching AC and DC _ tion with a multilayer glass passivation system for improved : currents. The types within the series differ in their voltage _ reliability performance at high junction operating tempera- ' ratings: the voltage ratings are identified by suffix letters in tures. Their dv/dt, di/dt capability and low switching losses . the type designations. make them suitable for applications such as lighting, power- switching, motor speed control and crowbars. All types utilize the JEDEC TO-220AB package. I $6000D_ S6000M S6000N : , VORM aoe eccccesscesseceeeceseeeeaeeeecesaeeessseeecensasenaee 400 600 0 0 i PPT (Qt 8.318) oe .eeeeesesesecseseessecsseeseeeeseseseeensessrees TOO 100 ———— AS, PGM (for 108 MAX.) 6. .ececseseeceseeeeeeeeeneeeeeneereesnueeeees mn 16 —_———__W PG (av) (Averaging line 10m8 maX) sossssssscceccsvseeeesecscccccey —— OB TStOrage oe. ceccesecesesesseceeeseeseessseeseseesetesseessseess TT +6510 150 ————— °C TS ceccccececsessececeseaeeeeeceuseeeeeeteseecessessesenserenees ——=-65 10 125 ———— °C jo 1282 A-03

G E SOLID STATE 01 Def) 3s7soa1 0017740 o I | 3875081 G E SOLID STATE o1e 177400 Uo Te 2SIS : Silicon Controlled Rectifiers i j $6000D, S6000M, S6000N ELECTRICAL CHARACTERISTICS, at Case Temperature (T.) = 25°C Unless Otherwise Specified CHARACTERISTIC Es $6000 FAMILY Repetitive Peak Forward and Reverse Blocking Current ‘ Rated VDRM and VRRM, Gate Open 1DROM at TC = 125°C IRROM ITM = 100A v™ v j Gate Trigger Current (dc) VD = 12 Vde 1GT RL = 30 Ohms. Gate Trigger Voltage (dc) VD = 12 Vde, RL = 30 Ohms vet Vv VD = VDRM, RL = 500 Ohms, TC = 125°C VD = 12 Vde, IT (initial) = 300mA_ Critical Rate of Rise of Off-State Voltage (Exponential Waveform) TC = 125°C, Gate Open, VD = VDRM. dv/dt - VS - { $6000D 175 H 'S6000M 150 S6000N 100 Turn-On Time IT =10A, VD = VDRM us 1G = 100mA. Turn-Off Time \\VD = VDRM, TC = 75°C, dv/dt = 20V/uS us IT = 2A for 50 wS, di/dt = 10A/uS IG = 80mA at Turn-On Thermal Resistance Junction to Case ReJC “cw Junction to Ambient, ROJA ‘ 2 gr way +4 wt ee j i (AL 9 a . “JUNCTION TEMPERATURE (Td)-deg JUNCTION TEMPFRATURE (Td)—deg 7 Fig. 1 - Typical Gate Trigger Current Vs. Temperature Fig. 2- Typical Gate Trigger Voltage Vs. Temperature i

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—. Silicon Controlled Rectifiers $6000D, S6000M, S6000N .° = *rTTTTrreryy q peg as es PIN Fe a ; bet oNY a z N Peceeeorr ye i -LISS CE EBEEEE EA 5 & gt SSE Bee 5 ro dO ca |] ee] Eoanictrae Sean Fig. 3 - Typical Holding Current Vs. Temperatura Fig. 4 - Typical On State Voltage Vs. Current a Cy . coe PACE a0 rrr BAT ge LT SW 2 0 ey AA A\\ g KSNG MeSe07220000 TEINS H WZe co NS : HAA SSS oop ooo LLU RSS IA EC ey oh ett nto ton Teton oe ea Fig. 5 - Maximum Power Dissipation Vs. Average Current Fig. 6 - Maximum Case Temperature Vs. Average Current H i a ; “1 | bre INSTI a vet SAE ETT i ee _LU TIE fe PETS TTT © SHE SCCM IPSS Og A vaso aso ome aaeae Fig. 7 - Peak Surge Current Vs. Duration i 1 _ ee AT | 1284 A-05