S5LB HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 40V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode S5LB H igh Diode Semiconductor SMB er Notes: copper pad areas Schottky Rectifier S5LB Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, 5.0 I FSM A 150 Junction Temperature T J ℃ -55~+125 Storage Temperature T STG Resistance load, TL= 60Hz Half-sine wave,1 cycle, Ta=25℃ Surge(Non-repetitive)Forward Current -55~+150 ℃ 100 Maximum RMS Voltage V RMS V 28 S5LB Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition S5LB Peak Forward Voltage V F V Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ I RRM2 Ta=100℃ 20 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 45 R θJ-L Between junction and lead 8 0.53 =5A Ta=25℃ I F 0.5
H igh Diode Semiconductor IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 150 120 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 125 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25 0.8 0.9 1.00.10 1.1 1.2 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) TL( 100 25 75 125 5.0 4.0 3.0 2.0 1.0 6.0
H igh Diode Semiconductor Dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.44) 0.084(2.13) 4.26 1.8 SMB SMB
Reel Taping Specifications For Surface Mount Devices-SMB H igh Diode Semiconductor