S4004N1 | DigiCamel IC Datasheet

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Electrically Isolated Packages * Electrically Isolated Packages : ‘ . . * High Voltage Capability — 30-600 Volts Teccor's SCR’s are available in a choice of 8 dif- * High Surge Capability — up to 950 Amps ferent device packages. Four of the 8 packages * Glass Passivated Chi are offered in electrically isolated construction Pp where the case or tab is internally isolated to allow

“TECCOR ELECTRONICS INC Fa DE i] 8872819 UOULOS4 & VT r-25 -ol SCR’s—Non Sensitive Gate - Part Number_- : VpRM & elo owe e Inn Se ee LRA tor] tonne aaa | wr | vr ' — — ” ‘Maximum Repetitive oc Peak Off-State Peak On-State } OC Gate-Trigger ui -- 1 ) — On-State Peak Gate-Trigger Forward & Reverse Voltage at Voltage [oO] I?) |A [°] A [oO] Current Oft-State Current Current @ Max Rated Yo = 12 VOC TYPE = _ we Forwad VD = 12.V0C VorM & VARM RMS Current | RL = 600 3 ¥ | *¥| & Reverse | RL = 600 Te = 2580 8) (13) i) : 7 Hn Voltage (4) (12) @ aN fe le min «bbc Amps mA Volts ‘ ‘ © | soxisnurs [nas | ta tt - 1. ror | rox | roams | room | toss” | "AMS)| TAY | vats mA 100°C Volts 12500 FT ernment [oo [me _lone] nom [on [om [| | sone Tf Tose Tot oo Pon To Tos 6 as [02 | [sore [no oe 0 to or oe os es [02 | [soe [Oo oe too 0 Por 02 os es [02 | | sae [ao Poe oo ao To 02 fo 6 8 02 | {ae {| ff} fa fa fe fae fo a ff fe a Oe OO | 02 | [soon fs oo a oor oe os es 02 {| soso a oo to Por oz Pos 6 8 02 | 16 [| ston [a oo to Por fo Pos Pe 8 02 | Amps [| sao [ne oo 200 0 or 02 os 6 a 02 | [| seo [a oan to oro Pos 68 02 | [| soon Pe co oo to Po oe Pos es [02 | {soot [80 Pe To to Po 02 Pos es 02 | [| soon 0 ng oo Por oe Pos ne 6 P02 | 3 [| so Pe to a to To oz Pos 6 1 02 | Amps [| ston [0 ag ao oe or 02 os ae fs | 02 | [| sano, [ao as a 0 ot oz os 6 5 [02 | | | soon fT ts foo to | [oe Pos | is ts | 02 | { Psoaoaet [ sosmnt [40 P26 Tao ft [wo To 02 fos Te 1s [02 | [TY sosart | soso [ao Pes [so [1 fw | or [oz [os [ie fs | 02 | [| stoner [stony [ao fas oo 1 fo on | oz Pos [6 | 1s [02 | [TF sznnart | zoos [a0 2s [200 fo for 02 Pos fe 1s [02 | [ saooart seo [ao Pas [ao | fo | or [oz Pos eas [02 | [| st000rt | seooany [ao Pes [ooo ao Tor oz Pos Te ts [02 | [ sosoeu | soaoert [0 ae [or oe os ae ts To | [| sosas, | sosoer, [To a8 so fe [or [oz [os [ae | 15 [02 | 6 [| [stone] soos [| 0 fae Poo Ps fot foe Pos [6 [ts 02 | Amps [| szooat_| savers [0 38 aot 8 ot [oz [os 6s as [02 | | | saonet | seooers [To fae [ao a 5 | or oz os Pe 45 | 02 | | | sens | sooner, [co a8 Too Por Poe fos Pte ts [oe | [| T sosoat_[soaoers fT sosoan [80 [a1 ao [+ fs [ot [02 Tos (ie ts [02 | [| sosoe,_| sosoers || sosoan | a0 [sa [6 [1 fe fo [oz fos [ie | 15 | 02 | [| stooat [stooges || toon [a0 faa foot [6 Por [oz Pos [re | 15 | 02 | [| seooat | szooeri [| szooen | a0 [81 [20 [1 [6 | ot | oz fos [16 | 1s | 02 | | | saooa | saooars || saooen | a0 [6a [ao 6 | or [oz fos [ie [18 | 02 | 8 [TF ssooet Tseooeer [| ssooen [a0 [sr | ooo as |r [oz [os [6 as | 2 | Amps [Tomer go Pt fo fs fot fos | tas | ts | 0 | po crea aa too on os a3 8 [oe | SS ee ee Po tere 0 fst] 300 as Fo fos [ass a SS OO OO poo crea ao a 0s or fos Ts [02 | po cee Po Ps os Pot Pos TP as ts [02 | GENERAL NOTES * Storage temperature range (TS) is — 65°C to + 150°C for T0-92 devices. — 40°C to + 150°C * Teccor's 2N6394 Series, 2N6400 Series, and 2N6504 Series devices conform to all JEDEC for TO-202 and T0-220 devices, —20°C to + 125°C for Fastpak and —40°C to + 125°C registered data. for all others * All measurements are made at 60 Hz with a resistive load at an ambient temperature of © Lead solder temperature is a maximum of 230°C for 10 seconds maximum; 1/16" from case. + 25°C unless otherwise specified. ‘© The case temperature (TC) is measured as shown on dimensional outline drawings. See * Operating temperature range (TJ) is - 65°C to + 125°C for T0-92 devices, O°C to + 125°C “package dimensions" section of catalog. for Fastpak, and - 40°C to + 125°C for all other packages.

TRONICS INC va DEB ssres3s ooozo4o 2 Py 7-25-0/ Electrical Specifications a . oc Peak Gate Peak Gate Average Peak One Gritical Rate RMS Surge Maximum Rate | Gate Controzed Curewt Holding Current Power Gate Power Cycle Surge of Applied (Non-Repetitive) of Rise of Turn-On Time Commutated Current (it) Dissipation Dissipation Forward Current Forward Voltage On-State Current On-State Gate Pulse Turn-Off . : Gale Open (it) 610) For a Period of Curent = 100mA Time ' (5) (14) 8.3 msec for \\et = 150mA | Ma. Width = Sys (9) 10) Fusing With Otis] Wh se RoeTine | Tine = Ons [aos oa a : [ao as a as aaa eo eR FS OS OO A | a Se XO A a OO OD Da es © OO DO [os ts a a es eG OOO OO | ee ee OO OD | a Gc OOO OO | eG DO OO OO | RS Oc DO OO AO | a a OO © [-—# |e fs fff [ao as os ae Ss GO Os CO OO XO 2 es © Oc OOO OO | RE © OO eG [as ts oso a ae © Oc OO OD | EO OOO DO | AG a ee ae ee ee ee ee A | ES EC OOD SO | EO OO OO | [oo a oo ass a to sO OO OO OO | a De OO OO | a SO A RE RO OOO OO DO ee Oc [ooo ae ae | wo | 2 | |S} 8 ee ee ee a A De a | ee [aos A GOA OG SO OG | a DO OO a P< OO OO CC [oa oa RR DG OG NOTES TO ELECTRICAL SPECIFICATIONS (9) Test conditions are as follows: IT = 1 amp for < 1.6 amp devices and 2 amp for = 3 amp devices. Pulse duration = 50.sec. dv/dt = 20 Vius. di/dt = —10 ampsixs for (1) See Figures 2 and 3 for current rating at specified operating case temperature. S16 amp devices, and —30 amps/js for = 3. amp devices |GT = 200 mA @ tum-on (3) See Figure 6 for instantaneous on-state current vs on-state voltage (typical). current. (4) See Figure 5 for IGT vs TC. (11) Pulse width < 3s. (5) See Figure 4 for IH vs Tc, (12) |GT = 40 mA maximum @ — 40°C for C122 devices (8) For more than one full cycle rating. see Figure 9. (13) VGT = 2.0 V maximum @ ~40°C for C122 devices. (7) See Figure 8 for tot vs IGT. (14) Initial on-state current =200 mA (DC) for 1 to 20 amp devices 400 mé (DC) for 25 (8) See Figure 7 for VGT vs TC. to 70 amp devices.

C 73 DEpaesze2ais oo01041 4 , + 25-0) ; Non S itive Gat SCR’s—Non Sensitive Gate o _ “A Maximum Repetitive oc Peak Otf-State Peak On-State | OC Gate-Tngger Of a On-State Peak Gate-Trigger Forward & Reverse Voltage at Voltage Lo] °] A [Oo] Current Ot State ” Current. - ears ml ec “o = 2 ad = o 1) = 12V0 ‘6 VARI MS Current L = 6 TYPE | “al “sl ” &Rovese | AL = 600 Te = 25 @ y Hi : i Volage ® a «ute dle «iho Amps mA Volts : ‘ A i Te = [T= | Tc = To = | t= ox roan vowsourea —|InAnis)} TAM | vous | ma | 2650 | 100% | 125°C | vonts | 260 [serena fmf] = aur] some | w_[ [ [ssi | sostorr | | 0 | 64 | so | 1 [15 {om | o2 [os | 16 {15 | 02 | [sw | sir | —+| w | et oo [1 tas {om | oz [os | 16 | 15 | 02 | [sooo | _seororr J+ 10 | ea] 2 [1 [s{ om [oz [os | 16 {15 | 02 | [sao | —saotorr || 10 | 64] 400 | 1 [15 | or [02 [os | 16 {15 | 02 | fo senor 0 mo i 0 aos e000 toe too fo eo CY sr t0 8 00 is fo os CF sen 06 ao as eo os se 0 aos 0 or CY sen00 0 a coo as Peo Por i PT rT ST; NT OO [sia || ston [tet 76 | too 1 [0 [or fos 0 [16 15 [02 | 42 [som —~*d eon tee | 200 fo or Pos fo Pe ss 02 | Amps [sao | | sworn | [76 | a0 [1 | 0 [or | os [x0 | ie [45 | 02 | [seo || sown | wz | 76 | 60 [1 || om jos | 0 | 16 15 [02 | a SOT a TO TX NN 1 DO XO Se OO A OX ee NS 15) A TO OX OO a NN C5 OD Ca TC tf Po tT os To Tie 5 P02 | [sot || i ts | es | so ft Po} ot fos [0 [6 [15 | 02 | 15 [sm | Sid SSCS tt | too Po fo Pos [0 | 6 15 [02 | Amps [sai | CS tf ts | co oo fot Pos fo fe 1s [02 | [sai |i —*| tf 9s | ao ft fo [or fos io [6 45 | 02 | [sem | iJ —~* 8 ‘| 95 foo Pt fo fo os fo | ae fas | oe | C0568 8 0 so ao Por os Po es [02 Cf st068 95000 0 or os 0 fe ts [02 | 16 ee RS TS OO Amps a NS sete 5 0 eo oor os Po Pe 8 Pe a NS A 2 OO OG XY OO ee RS OE OT A TX a OR TO OT OO - ee SS 1 OO OX OO a . a a A OO 20 a a a Amps [smu |i CTSCd a ts Peo fo ot os fo |e ft [sagan fen 8 gon got 0s 0 Ps as 02 = [son TCU TTCTCTCwd Po ot os Po Ps 8 fo ‘VIM @ iT = 30Apk GENERAL NOTES . NOTES FOR JEDEC DEVICES ‘© Teccor's 2N6394 Series, 2N6400 Series, and 2N6504 Series devices conform to all JEDEC 1. 2N6400-6405 series of devices also conform to the following speci‘ications registered data. a Maximum VGT = 2.5 volts @ - 40°C ‘© All measurements are made at 60 Hz with a resistive load at an ambient temperature of b. Maximum |H = 60 mitliamps @ ~40°C + 25°C unless otherwise specified. ‘© Operating temperature range (TJ) is — 65°C to + 125°C for TO-92 devices, O°C to + 125°C 2. 2N6504-6508 series of devices also conform to the following specifications’ for Fastpak. and - 40°C to + 125°C for all other packages. a. Maximum VGT = 1.5 volts @ - 40°C '* Storage temperature range (TS) is — 65°C to + 150°C for 10-92 devices, - 40°C to + 150°C b. Maximum IGT = 75 milliamps @ ~40°C ba 10200 and 10-220 devices, —20°C to + 125°C for Fastpaks and ~ 40°C to + 125°C cc. Maximum |H = 40 milliamps @ - 40°C or a © Lead solder temperature is @ maximum of 230°C for 10 seconds maximum; 1/16" from case. ‘* The case temperature (TC) is measured as shown on dimensional outline drawings. See 48 “package dimensions” section of catalog.

TECCOR ELECTRONICS INC D 4872819 GOOLO4e & D T~25-0/ - Electrical ificati : ectrical specitications Lf] ew [rom] Pawn wa Te | ae |e | | oc Peak Gate Peak Gate Average Peak One ical Rate RMS Surge Maximum Rate} Gate Controled Ciraat Holding Current Power Gate Power Cycle Surge of Appted (Won-Repetitiv) of Change of |} TurmOn Time ] Commuated Current (it) Dissipation Dssppation Forward Current Forward Voltage OnStale Curent On-Stale Gate Pulse Tunott Gate Open (it) 6 (10) For a Period of Current = 100mA Tine 6) (14) 8.3 mse for IT = 150mA | Min. Widh=5es |) (10) Fusing With Ops | With Rise Amps Vols Rise Tine | Time aos = 100% = mA Amps Watts Watts | co | se [rons e-r| Amps?sec Ampsiis Hs xs a es Ee ET TT es a aT TT a a ee TE DO ee ST ON A TO Se ee NO TO es a A a a A OT A OE es a OTT See ee eS RE A NS NY eS OD es ee SC A A OT AC a a a A ee a YA TO a TO OT A | a CT i a OT ea TT { ee TX a a TO ee TO TT A GD DC es A CA OC Oe A OE es CO YO ee EY A A TT es a CT es eC Sa eS A OO es ea CO TO es a TO es a OO a CR Tn a ee CN a a a A CA OT A a a TA TO a eA CD a A a eA A a a OS CE TO es a ET a ae a UT a NS TA CT Se CD NOTES TO ELECTRICAL SPECIFICATIONS (9) Test conditions are as follows: iT = 1 amp for = 1.6 amp devices and 2 amp for = 3 amp devices. Pulse duration = S0,sec. dv/dt = 20 Vins, d/dt = —10 amps/ys for (1) See Figures 2 and 3 for current rating at specified operating case temperature '< 1.6 amp devices. and —30 amps/ys for = 3 amp devices. IGT = 200 mA @ turn-on. (2) Seo Figure 1 for free air current rating (10) See Figure 2 {A.B.C.0,E) for maximum allowable case temperatures @ maximum rated (G) See Figure 6 for instantaneous on-state current vs on-state voltage (typical). curcent. (4) See Figure 5 for IGT vs TC. (11) Pulse width = Sys. (5) See Figure 4 for IH vs TC. (12) IGT = 40 mA maximum @ — 40°C for C122 devices. (6) For more than one full cycle rating, see Figure 9. (13) VGT = 2.0 V maximum @ — 40°C for C122 devices. (7) See Figure 8 for tot vs IGT. (14) Initat on-state current =200 mA (DC) for 1 to 20 amp devices. 400 mA (DC) for 25 (8) See Figure 7 for VGT vs TC. to 70 amp devices.

c ) INC” DE 4472419 OO01044 oO [J 45-01 | ectrical Specifications i Yo Peak Gate Peak Gate Average Peak One Citcal Rate AMS Surge Maximum Rate | Gate Controled | Grew . Holding Current Power Gate Power Cycle Surge of Applied (Won Repetitive) of Change of | Tum-On Time } Commutated Current (iy Ossipation Oissipation Forward Current Forward Voltage Or-State Curent OnSiate Gate Pulse Tum Ott ! Gate Open (it) (6) (10) Fo a Period of Current = 150mA Time (14) 8.3 msec for |r = 150mA |] Mn Width=5ys ] (8) (10) ' Frsing With O tps Woh ise mA Amps Watts Watts | ae | sat [10-1002] Amps?sec xs 1s xs LS A OT OO 5 a a OT A ae A EO A EO EO OO Se SN EO a RE CS A YN a SE XS OT EO GO A a RE OT OO A DO - | a EC OO OO | a DE CS ES OT OD | eS YO a a <0 OO | [so fas as os s00 fae [80s Pas soo a ES SO OO | [wo fas 00 aes [aso asta [soa ooo aes 000 ons oo a A OY a OO a OO a A OO DO a ES a Oc Oc A | Se OO OO a OO a a OO | SE DOO a | soso sot s00 i045 sao 00s OO [so foot sof 750425 00 a0 toes AT OT [so | so oso 00 aes | 00 as ees ee RD OO | eS A SO a OO SH a A OO SO [soso so 950 00 2s a0 gras 200 ass OO TOO NOTES TO ELECTRICAL SPECIFICATIONS (9) Test conditions are as follows: IT = 1 amp for < 1,6 amp devices and 2 amp for = ; 3 amp devices. Pulse duration = 50sec. dv/dt = 20 Vis. dvdt = —10 amps/s for {1} See Figures 2 and 3 for current rating at specified operating case temperature. = 1.6 amp devices, and —30 amps/ys for = 3 amp devices. IGT = 200 mA @ tumon {2) See Figure 1 for free air current rating (10) See Figure 2 (A.8.C.0.E) for maximum allowable case temperatures @ maximum rated (3) See Figure 6 for instantaneous on-state current vs on-state voltage (typical) current. (4) See Figure 5 for IGT vs TC. (11) Pulse width < ps. (5) See Figure 4 for IH vs Tc. (12) IGT = 40 mA maximum @ - 40°C for C122 devices. (6) For more than one full cycle rating. see Figure 9. (13) VGT = 2.0 V maximum @ —40°C for C122 devices. {7 See Figure 8 for Mts IGT. (14) Initia! on-state current = 200 mA (DC) for 1 to 20 amp devices. 400 mA (OC) for 25 {8) See Figure 7 for Ver vs TC. to 70 amp devices.

: ECCOR ELECTRONICS INC = rE DE paszeans oooL04s Lb [Tt 25-0l . ea SCR’s—Non Sensitive Gate we _ THERMAL RESISTANCE (STEADY STATE) © ss [oy ——|° Poesia gOy ON || ge | Bl & 2 fa ie Wy Ht PLASTIC THERMOTAB TYPE 1 NON-ISOLATED ISOLATED: NON-ISOLATED FASTPAK 70-92 TO-220AB TO-202 ‘TO-220AB TO-218X TO-218X TO-3 BASE RT A [team [a | soane [sao [scans [as asm | soane [as [seam [ae ee [worm [ToT awe te [wom [Tt [wom fT tT [wom [oT Tt [oom fT te [im fs [sim fe [ome a [im Pe [sim fe [im fa ELECTRICAL ISOLATION Most Teccor isolated SCR packages will withstand a minimum high potential test of 2500 VAC RMS from leads to case over the device’s operating temperature range. See table for standard and optional isolation ratings. ELECTRICAL ISOLATION FROM LEADS TO CASE U.L. RECOGNIZED FILE #71639 ISOLATED SOI eal De OO a HS 1 “For 4000V Isolation Use “'V" Suftix . FIGURE 1A — Maximum Allowable Ambient Temperature FIGURE 1B — Maximum Allowable Ambient Temperature vs RMS On-State Current vs Average On-State Current 120) 129) [ | , Le ‘CURRENT WAVEFORM: Sinusodal LORD: Rast or inucove 100) ep CONGUGTION ANGIE 160" = 109) R [LASSE FANNEEEE I to] NNSA i eo] IN IN g Ne Neel PENe. i DN< g 60 % Pe 60] yal HLTA RNS tT TIRES "TEATS PS ELL TAS 0 20 © 02 04 06 08 19 12 14 18 18 20 22 0 02 of 06 08 0 12 14 . AMS On-State Curent ['T (RMS) |—Amps 52 Average On-Stale Current ['T (AV) }—Amps

: 7 peyes ?2814 GUULUYE 3 Te2s-0l SCR’s—Non S itive Gate _ SCR’s—Non Sensitive Gate

4 FIGURE 2A — Maximum Allowable Case Temperature FIGURE 28 — Maximum Allowable Case Temperature

ih - vs RMS On-State Current vs RMS On-State Current i 130 SSS 130, — y ~GURRENT WAVEFORM: Sinusoidal (CURRENT WAVEFORM: Sinusoidal INS CONDUCTION ANGLE: 100" Ss CONDUCTION ANGLE” 180° ro WSS 4 oS :

2 S= CASE TEMPERATURE: Neue a shown ° a— GAGE TEMPERATURE: Mensur a sown

g . g . 2 raves BIN SS ee Sw See °) ANS Tatae Py Los : : iN ee] Rang VS: R g \\ SN Ue Vee; Rou Eten » & 100 Ot a are ee ia 5 100] BOS Ree RRs Ey PER, i Cs " ¥ 20 RY ROP ofa, 6 “ae MP 7S?) Fs ie ie jo fat PEP caf J 5 § x Pi ot tp i +++] 3 2 © © a ae ee ee 2 10 20 30 40 0 2 4 ° 3 er RMS On-State Current (!T (AMS) }—Amps AMS On-State Current [IT (RMS) }—Amps FIGURE 2C — Maximum Allowable Case Temperature FIGURE 2D — Maximum Allowable Case Temperature vs RMS On-State Current vs RMS On-State Current 199 129 ke | cunaen vAveror: Stott RI] lnm waverOn shoc ~ nate endive hw! no: Fase eee

9 Siig, | EAS TEMPERATUME Have sown 2 | WSS EREETERPERATURE Nowe 0 town

D> WS g os OR RE RES . oS Rc) i a PS i) "a 2 aT 8 * ~ | i. | | EE PS fa | TP jt | ttt eee. ae § 1 5 D Aj att Et ET 60) = 60) al Tit wt ETT EIT TT ° ‘ 8 ‘2 8 2» o « 6 2 Ww o% 2 a 9 AMS On-State Current [HT (AMS) |—Amps. AMS On-State Curent [IT (RMS) |—Amps FIGURE 2E — Maximum Allowable Case Temperature FIGURE 3A — Maximum Allowable Case Temperature vs RMS On-State Current vs Average On-State Current 120 139 cunnent waverotut smusclt ‘unre waverDnat Snusdoa raof ISONDUCTION aot: Ibu 120 NSS CONDUCTION AVOLE: 100° g Se ERS TENICERATURE: Messuro os shown] e ASS GiGE TEMPERATURE: usa shovn S va NN bw SS 5 drawings i | Se Lt VP Neel 100 > S|. E 100 END 2 eo KB ker el re, i | Pe [atlas RSS RR en rey Ke, I es ase tozts asduareoy oS. Te | co & Fh pL erEN NS Ley § N 5 7 Peet tT PT Tr ee = 60] i 60) A ee oe | ° 0 @ wo @ 0 6 7 ° s 10 48 2 26 30 AMS On-State Current ['T (RMS) }—Amps Average On-Siate Current (!T (AV) }-Amps.

i‘. = Sa . pTECCOR ELECTRONICS INC _ ee DEpes eebls uuu? s FO T- 25-0 ‘SCR’s—Non Sensitive Gate. - SCR’s—Non Sensitive Gate. = =. ’ FIGURE 3B — Maximum Allowable Case Temperature . FIGURE 3C — Maximum Allowable Case Temperature vs Average On-State Current ~ vs Average On-State Current s NS RSE TEMPERATURE: Neasue as shown © vl Ie | A on dmons'onal ravings = DOS Pe, Lon 3 DIE £ IN NO & 100 op RELIES B 0) a é || > mar ee a me ioz rep ie Peel jt iim. : NENG SS ee € oN >t € XS € H le x Pia :” i” Os 15 H See al : « J PE Ee ‘Average On-State Current [IT (AV) |—Amps Average On-State Current {IT (AV) |—Amps FIGURE 3D — Maximum Allowable Case Temperature FIGURE 3E — Maximum Allowable Case Temperature vs Average On-State Current vs Average On-State Current 19 19 . he egestas N cue wneronu oe eae 5 SS Shaimeneona Srminge £ woo 13; Sel, i, INS 228 hue t0200 obnssovareoy goo] > Rye ma je SS aN i SI a Baim voxe aT? SIRS EN : 4 es aur Fate 7S FRE. T_| ST rere NT | ~ > 5 NIN se ee es ee | wt tet fT TT es ee ee | Average On-Siate Current {IT (AV) |-Amps. Average On-State Current ['T (AV) Amps. FIGURE 4 — Normalized DC Holding Current FIGURE 5 — Normalized DC Gate-Trigger Current vs Case Temperature vs Case Temperature i TTT apes [| LXE Ey pt HN CURRENT = 200 mA (DC) . FOR 1-20 AMP DEVICES, N\\ i eae oe ENR PUNE ET EE yt ig PEt yt e WEN ET TT TT e LIN asi TNT TT esti TL NET TTT eT TSA TE PriLT TINE EE

3 PS 3 Nt

[PDN LE bh ET TT til EE TT Ee Case Temperature (To}—°c Case Temperature (To}—°C. . ee ee oe I

TECCOR ELECTRONICS INC 73 DEB ss72en9 0001049 49 T T325-0l ; Sensitive G SCR’s—Non Sensitive Gate . : : : FIGURE 9 — Peak Surge Current . vs Surge Current Duration = SUPPLY FREQUENCY: 60 Hz Sinusoidal LAMP Breet _| tt} Ft — ais ON-STATE CURRENT: (IT (RMS)]: Max.

600 SPAR Silt} ———| —} — Rated Value at Specified Caso Temperature

| 4 . Laue be ee Be) [RST ines S 10S SS ie Ses a) a A as es Ly AMES S54 = <a OE) c SESS SS See

8 SEE CAT SSS Se

77 SSS een

3 Diss. é § lie ee Vn 2 0 eS SS T—PEVICES] ge See @ s-— J —Se 8 ‘Lome oe I Se GATE CONTROL MAY BE LOST ~4o.4)

3 DURING AND IMMEDIATELY Sime bol Le

FOLLOWING SURGE CURRENT, YLT oT ee] 2|LINTERVAL. | PSs ‘OVERLOAD MAY NOT BE REPEATED’ RATED VALUE, 1 2 3.9456 8 10 20 30 40 5060 80100 200 300400 600 800 1000 Surge Current Duration—Full Cycles FIGURE 10C — Power Dissipation (Typical) FIGURE 10D — Power Dissipation (Typical) vs RMS On-State Current vs RMS On-State Current 2 © {ttt ttt j lemalwedasedame [|e Es go 50 |-LOAD. Resistive oF inductive a FS (QURRENT WAVEFORM. Half Sine Wave | || 2 © [eonsuction aitete: 160° 7 8 a & ov Saipan z gy "| eens ete Bau é yg | i; r _aane 4a BLE TT wrt i. z SCOOP V7 be 6 VA 3 : p ie fA PAA EC VA EEE AT LF it tt tt tf ae o «8 8 ao = @ . 0 m o ww 0 #0 AMS On-State Current [IT (RMS}}—Amps AMS On-State Current {'T (RMS)|—Amps . . 56

Product Information

S4004N1 specifications and overview.

Summary

SCRs 1-70 AMPS NON-SENSITIVE GATE

Description

SCRs 1-70 AMPS NON-SENSITIVE GATE

Source title S4004N1 Datasheet(PDF) - Teccor Electronics

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