S3AH TS | Alldatasheet

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Technical content

S3AH – S3MH Taiwan Semiconductor

1 Version: A2102

3A, 50V - 1000V Surface Mount Rectifier

FEATURES

  • AEC-Q101 qualified
  • Glass passivated chip junction
  • Ideal for automated placement
  • Low forward voltage drop
  • High current capability
  • High surge current capability
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant
  • Halogen-free according to IEC 61249-2-21

APPLICATIONS

  • DC to DC converter
  • Automotive application
  • Car lighting
  • Snubber
  • General purpose MECHANICAL DATA
  • Case: DO-214AB (SMC)
  • Molding compound meets UL 94V-0 flammability rating
  • Terminal: Matte tin plated leads, solderable per J-STD-002
  • Meet JESD 201 class 2 whisker test
  • Polarity: Indicated by cathode band
  • Weight: 0.210g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 3 A VRRM 50 - 1000 V IFSM 100 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL S3 AH BH DH GH JH KH MH UNIT Marking code on the device S3A S3B S3D S3G S3J S3K S3M Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Forward current IF 3 A Peak forward surge current, 8.3ms single half sine wave superimposed on rated load IFSM 100 A Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C

S3AH – S3MH Taiwan Semiconductor

2 Version: A2102

Junction-to-lead thermal resistance RӨJL 13 °C/W Junction-to-ambient thermal resistance RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) IF = 3A, TJ = 25°C VF - 1.15 V Reverse current @ rated VR (2) TJ = 25°C IR - 10 µA TJ = 125°C - 250 µA Junction capacitance 1MHz, VR = 4.0V CJ 60 - pF Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 1500 - ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE(1) PACKAGE PACKING S3xH DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(S3AH) to 1000V(S3MH)

S3AH – S3MH Taiwan Semiconductor

3 Version: A2102

(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Maximum Non-Repetitive Forward Surge Current 25 50 75 100 125 150 100 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C 0.1 Pulse width 300μs 1% duty cycle 100 120 1 10 100 8.3ms single half sine wave CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A)

S3AH – S3MH Taiwan Semiconductor

4 Version: A2102

(TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram

S3AH – S3MH Taiwan Semiconductor

5 Version: A2102

PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code

S3AH – S3MH Taiwan Semiconductor

6 Version: A2102

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