S3AF HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● S3AF-S3MF : S3A-S3M Item Symbol Unit Symbol Item I I Thermal Resistance(Typical) Peak Forward Voltage I FM =3.0A l I F(AV) I FSM I 3.0 100 60Hz Half-sine wave,1 cycle, Ta=25℃ V RMS V 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 JF KFAF BF DF MF GF 125 60Hz Half-sine wave, Resistance load, TL=110℃ S3AF THRU S3MF 1.1 125 Maximum RMS Voltage
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 1 10 100 1000 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.6 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.1 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 0 20 40 60 80 100 1.0 100
H igh Diode Semiconductor 4.65 1.9 0.55 SMAF SMAF Dimensions in inches and (millimeters) .146(3.70) .130(3.30) .106(2.70) .094(2.40) .063(1.60) .051(1.30) .193(4.90) .173(4.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) .047(1.20) .035(0.90)
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMAF