S3ABF HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● S3ABF-S3MBF : S3AB-S3MB S3ABF THRU S3MBF Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =110℃ 3 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 100 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 100 50 200 400 600 800 1000 V 70 35 140 280 480 560 700 Maximum RMS V RMS Voltage ABF BBF DBF GBF JBF KBF MBF Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =3.0A 1.1 Peak Reverse Current I RRM1 μA V RM RRM Ta =25℃ 5.0 I RRM2 Ta =125℃ 125 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 53 R θJ-L Between junction and terminal 16 ABF BBF DBF GBF JBF KBF MBF
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=75 8.3ms Single Half Sine Wave 1 10 100 1000 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.6 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.1 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 0 20 40 60 80 100 1.0 100
H igh Diode Semiconductor SMBF SMBF 1.73(4.40) 1.65(4.20) 1.46(3.70) 1.38(3.50) 0.86(2.20) 0.75(1.90) 2.16(5.50) 2.00(5.10) .100(0.26) .007(0.18) .051(1.30) .043(1.10) Dimensions in inches and (millimeters) .040(1.00) 4.80 2.54 1.8
Reel Taping Specifications For Surface Mount Devices-SMBF H igh Diode Semiconductor 3.80 0.150 5.75 0.226