S3700 NJSEMI | Alldatasheet

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^zmi-donaiictoi iJ-^ioaucti,, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 S3700 Series 5-A Silicon Controlled Rectifiers For Inverter Applications Features:

  • 600V. 125'C Tj operating
  • High dv/dt and dl/dt capability
  • Low switching losses
  • High pulse-current capability
  • Low forward and reverse leakage
  • SIPOS oxide glass multilayer passivation system
  • Advanced unisurface construction
  • Precise Ion-Implanted diffusion source TERMINAL DESIGNATIONS
  • OTTOM VIEW MDECTO-ttlAA MAXIMUM RATINGS./»6»Ofufe-MM/mum Values: Non-repetitive peck raven* voltage:* Gate Open VMW Non-repetitive peak off-state voltage:* GateOpen VMM Repetitive peak reverse voltage:* Gate Open VWHM Repetitive peak off-state voltage:* Gate Open VDMM On-state current: Tc =B5"Ci conduction angle = 180": HMS Innnu Average |TM« For other conditions Peak surge (non-repetitive) on-state current: IT«M For one full cycle of applied principal voltage, Tc = 85'C

60 Hz (sinusoidal)

SO Hz (sinusoidal) For more than one full cycle of applied principal voltage Rate of change of on-state current VD = VDMU. Io7 = 50mA. t, = 0.1/ffl dl/dt Fusing current (for SCR protection): Tj = -40 to 1WC. t = 1 to 8.3 ms m Gate power dissipation:* Peak Forward (for 100s max.. See Fig. 7) POM Peak Reverse (for 10/n max.. See Fig, 8) PMu Average (averaging time —10 ms max.) , P0«»i Temperature Range:f Storage T« Operating (Case) T6 Pin Temperature (During soldering): At distances > 1/32 In. (0.8 mm) from seating plane for 10 s max ^^ 83700B 300 300 200 200 S3700D 500 500 400 400 83700M 700 700 600 600 .3.2 . i. 3 & 4 . .80. .65. - See Fig. 5 . .200.

  • These values do not apply If there Is a positive gate signal. Gate must be open or negatively biased.
  • Any product of gate current and gate voltage which results in a gate power less then the maximum Is permitted, t For temperature measurement reference point, aee Dimensions! Outline. IS IS nc - - -4fl*0 1ffO -40 to 175 W Ul ... °C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS

At Minimum Ritingi Unleu Othwwiw SptcifM *nd tt Indictttd C»H Temptraturt (Tc) CHARACTERISTIC SYMBOL LIMITS FOR ALL TYPES Except u Specified MIN. TYP. MAX UNITS Peak Off-State Current: (Gate open, Tc=125'C) Forward Current (IOOM) at VD - VDROM I0OM Reverse Current (IROM) at VR • VBRQM IRQM Instantaneous On-State Voltage: iT = 30 A (peak), Tc - 258C VT For other conditions Instantaneous Holding Current: Gate open, T^ - 25°C Critical Rate of Rise of Off-State Voltage : VD - VQRQM. exponential voltage rile, Gate open, TC - 1Z5°C dv/dt DC Gate Trigger Current: V0-12V(dc), RL = 30n,Tc-25°C IGT For other conditions DC Gate Trigger Voltage: VD = 12 V (del, RL • 30 O, Tc - 25°C VGT For other conditions Gate Controlled Turn-On Time: (Delay Time + Rile Time) For VDX • VDROM. 'GT * soo mA, t,»o.i in, T - 2 A (peak). Tc = 25°C (See Fig. 10) Circuit Commutated Turn-Off Time: i-r = 2 A, pulse duration - 50 «s, dv/dt - 100 wi's, -di/dt = -10 A/us, IG1- - 100 mA, Thermal Resistance: Junction-to-Case RtfJC Junction-to-Amtaient R0JA 0.5 0,3 1.5 mA 2.2 3 See Fig.6 rnA 100 250 IS 40 See Fig.7 mA 1.8 | 3.5 See Fig. 7 0.7 »C/W °CA/V LCU • llbllMl MURWCTnt fig. 1-power dissipation vs. average on-state current. Fig. l-Dlulpttion n. repetition ntt,