S2A-J HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 50V-1000V
  • High surge current capability

Applications

  • Rectifier From A To MX Marking Polarity: Color band denotes cathode S2X H igh Diode Semiconductor SMAJ Notes: pad areas S2A THRU S2M Item Symbol Unit Symbol Item I I Thermal Resistance(Typical) Peak Forward Voltage I FM =2.0A l I F(AV) I FSM I 60Hz Half-sine wave,1 cycle, Ta=25℃ 60Hz Half-sine wave, Resistance load, Ta=75℃ V RMS V 35 70 140 280 420 560 700Maximum RMS Voltage

H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 60Hz Resistive or Inductive Load (7.0mm×7.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 11 0 1 0 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.1 1.0 0.5 VF(V)

H igh Diode Semiconductor SMAJ SMAJ Dimensions in inches and (millimeters) 0.177(4.50) 0.157(3.99) 0.110(2.80) 0.098(2.50) 0.060(1.52) 0.030(0.76) 0.222(5.66) 0.194(4.93) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.42) 0.078(1.98) 0.067 (1.70) 0.047 (1.20) 4.12 2.0 1.8

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA