S2800 NJSEMI | Alldatasheet
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u ^s.nii-donaiLcto'i ^Products., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors ... designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
- Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
- Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
- Blocking Voltage to 800 Volts TELEPHONE: (973) 376-2922 (212)227-6005 S2800 SCRs
10 AMPERES RMS
-O K (TO-220AB) MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1 ) (Tj = 25 to 100°C, Gate Open) F A B S2800 D M N Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State VoltageO ) F A B S2800 D M N RMS Forward Current (All Conduction Angles) TC = 75°C Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (t « 10 us) Forward Average Gate Power Operating Junction Temperature Range Storage Temperature Range Symbol VRRM VDRM VRSM VDSM 'T(RMS) !TSM |2t PGM PG(AV) TJ Tstg Value 100 200 400 600 800 125 250 500 700 900 100 0.5 -40 to +100 ^tOto+150 Unit Volts Volts Amps Amps A2S Watts Watt
- VDRM ar|d VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate \\e shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. — Quality Semi-Conductors
Thermal Resistance, Junction to Case Symbol Rejc Max Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TC = 25°C Tc = 100°C Instantaneous On-State Voltage, (IjM = 30 A Peak, Pulse Width =£ 1 ms, Duty Cycle <S 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) Holding Current (Gate Open, VD = 12 Vdc, Ij = 150 mA) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 2 A, IGR = 80 mA) Circuit Commutated Turn-Off Time (VD = VDFRM, ITM = 2 A. Pulse Widtn = 5° us> dv/dt = 200 V/LLS, di/dt = 10 A/us, Tc = 75°C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDFSM. Exponential Rise, TC = 100°C) Symbol IDRM. 'RRM VT IGT VGT IH »gt dv/dt Win Typ 1.7 0.9 1.6 100 Max 1.5 Unit uA mA Volts mA Volts mA us us V/us T I SEATING ~'~l PLANE STYLE 3: PIN1. CATHODE 2. ANODE 3. GATE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES WIN 0.570 0.380 0.160 0.025 0.142 0.095 0.110 0.014 0.500 0.045 0.190 0.100 0.080 0.045 0.235 0.000 0.045 MAX 0.620 0.405 0.190 0.035 0-147 0.105 0.155 0.022 0.562 0.055 0.210 0.120 0.110 0.055 0.255 0.050 0.080 MILLIMETERS MIN 14.48 9.66 4.07 0.64 3.61 2.42 2,80 0.36 12.70 1.15 4.83 2.54 2.04 1,15 5.97 0.00 1.15 MAX 15,75 10.28 4.82 0.88 3.73 2.66 3.93 0.55 14.27 1.39 5.33 3.04 2.79 1.39 6.47 1.27 2.04