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$2800 Series File Number 890 10-A Silicon Controlled Rectifiers TERMINAL DESIGNATIONS For Power Switching, Power Control ome Features: —= ™ 800V, 125 Deg. C T, Operating ner ANODE ® High dv/dt and di/dt Capability ——= = Low Switching Losses ==
8 High Pulse Current Capability Tor view ‘CATHODE
™ Low Forward and Reverse Leakage g2cs-39868 ® Sipos Oxide Glass Multilayer Passivation System § Advanced Unisurface Construction JEDEC TO-220AB, '§ Precise lon Implanted Diffusion Source ‘The $2800 series are high voltage, medium current silicon These Thyristors feature an advanced unisurface construc- controlled rectifiers designed for switching AC and DC cur- _tion with a multilayer glass passavation system for improved rents. The types within the series differ in their voltage rat- reliability performance at high junction operating tempera- ings: the voltage ratings are identified by suffix letters in the tures. Their dv/dt, di/dt capability and low switching losses type designations. make them sultable for applications such as lighting, power- I, itr OT Alltypesutlize the JEDEC TO-22088 package. switching, motor speed control and crow-bars, i S2800F S2800A $2800B S2800C $2800D S2800E S2800M $2600S $2800N Tygamgy(T¢=100°C, 0 180°) ose .eeceeeeeee | 1 Tyee fOr 1 full CyCle) sos eeeeesceecee eee | ee 100 ak PT (@t8.3 mS) s..cccceccccecseeeceeneeses 9 ee Qs i Poy (for 10S MAX.) 20-0. cece cece eee 16 w Ty cccecccencecccenenenesseanenenee cece ee | ee ee ~65 to 4125 ——___________ °c T; (During soldering): \\ . 730. - ee - 1267 G-02 .
G E SOLID STATE 01 de ss7soar couz7es 4 an me oO 725 0 TASS SOLID STATE O1E 17 387 5081 GE SOLID SIAR Silicon Controlled Rectifiers $2800 Series ELECTRICAL CHARACTERISTICS . At Maximum Ratings Unless Otherwise Specified, and at Indicated Case a a. i For All Types Except as Specified Jono OF Iron Vo = Vonou OF Va = Venous To *H125°C ..eccsseeeessseeeeseeeeeeeenee Vr Te Vp = 12 V (DC), Ry = 30.2 Te H 425°C .eeececccceeeeeesesseeecesseeenseeeeeeeeeeneeeeeeeeenen - 8 5 For other case temperatures See Fig. 5 Ver Vp =12V (OC), R, = 300 For other case temperatures See Fig.6 ——_—_-| Tho - dv/dt Vo = Voaous Exponential voltage rise To = +125°C (See Fig. 11) S2800D 1s. ss sssissssssvevesssvevevscesvsvacscesvacseneeseseseees 20 -_ | Yo = Vorom: by = 2A lor = 80 mA, 0.1 ws rise time To = +25°C (See Fig. 9) “a q Vo = Vonom, fr = 2 A, tp = 50 ps i dv/dt = 200 V/ys, di/dt = -10 A/ps ! lar= 200 MA at torn To = +75°C (See Fig. 12) [Reg a om | t = 731 1268 = G-03
G E SOLID STATE 1 eB 2a75081 oor77eb & ‘3875081 G E SOLID STATE o1e 17728 «2 T2575 Silicon Controlled Restifiers == $2800 Series . eee ec | Eee ie Ay [ bea Efe Lele Agel etETe . PERS ese i sr a ee ee ea Jee eese Se | foe 4eeeeeeseee t ae ea TET ee Se i ao eee ee BIE ee ius on- #747 CURRENT fren] —* cnt onus stare CURRENT rian OR Frenne] —* Fig. 1 — Power dissipation vs. on-state current. Fig. 2 Maximum allowable case temperature ve on-state current. : kt panne ; Ee Seas 1S Es ataiaeed Po : Re | NTN Senate torte 5 HEE Se ee ae ; Be ol [IS ae eee tt eae PU le [pec coeslll SNOUT CT i a Sl g ee ge eg alt FATE | ee ‘ayuoen oe ous veux on sane nonne, Pe © ystanrancovs on-s047e vormatte oy Fig. 3 — Allowable peak surge on-state current vs. Fig. 4 — Instantaneous on-state current vs, on-state : urge duration. voltage , SE , ERE 3 00s ee 5 ee ee (2S : ee as alt | iG See i ye De ee ee He Soe e cost sse 3 ee ees Sc GEn nes es ee eee es =| Fig. 5 — DC gate-trigger current vs. coe Fig. 6 — DC gate-trigger valtage vs. case temperature, temperature. i 732. a | 1269 «G04
G E SOLID STATE on def) 387sos. 0017727 6 T "3875081 GE SOLID STATE O1E 17727. D0 T-2S7/S ee _ Silicon Controlled Rectifiers $2800 Series 2 eee iH FEE SSHEEELEREEe ra daset Ecos pneeEeceitas a Oe i "ease rewenarineind se Fig.7 — Holding curront vs. case temperature. Fig. 8— Normalized crea! a ato rise of off-state Fig. 9 — Gate-controlied turn-on time vs. o--- aL i wee ewe eee gate trigger current. 4 ob ‘ecrewesne ‘| Fig. 10 — Rate of change of on-state current i fe CRITICAL 4/41 Nyy with time (defining alfa). i 2 4 2 | tm ayer | ‘ Oe [nu —> Nite i ! Z 63% OF vp I | Si - by—1, —4 M0 Za how 1 Lowe : . Hoes 2 Pa sess-s601 i were. BROS HESSD Fig. 12 — Relationship between instantaneous _ Me ‘on-state current and voltage, showing Fiat Tine (acing cal ania Gicu commuted tarn-o to a (: